Dark Current Analysis of Mid-Wave Quantum Dots-in-a-Well Photodetectors Monolithically Grown on Silicon Substrate

Wei Chen,Zhuo Deng,Jian Huang,Baile Chen,Huiyun Liu,Jiang Wu

DOI: https://doi.org/10.1109/acp.2018.8595811

2018-01-01

Abstract:In this work, we analyze the dark current performance of the InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) mid-wave infrared photodetectors monolithically grown on silicon substrate.

What problem does this paper attempt to address?

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

DK Sengupta,W Fang,JI Malin,J Li,T Horton,AP Curtis,KC Hsieh,SL Chuang,H Chen,M Feng,GE Stillman,L Li,HC Liu,KMSV Bandara,SD Gunapala,WI Wang

DOI: https://doi.org/10.1063/1.119473

IF: 4

1997-01-01

Applied Physics Letters

Abstract:In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP’s) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Important issues for QWIP applications such as dark current, spectral response, and absolute responsivity are studied. We find that compared to a similar detector structure grown on a GaAs substrate, the detector grown on a GaAs-on-Si substrate exhibits similar dark current and absolute responsivity while displaying a small blueshift in the spectral response.
Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

Wei Chen,Zhuo Deng,Daqian Guo,Yaojiang Chen,Yuriy Mazur,Yurii Maidaniuk,Mourad Benamara,Gregory J. Salamo,Huiyun Liu,Jiang Wu,Baile Chen

DOI: https://doi.org/10.1109/jlt.2018.2811388

IF: 4.7

2018-01-01

Journal of Lightwave Technology

Abstract:In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolved photoluminescence spectra measured from the DWELL photodetector revealed a long carrier lifetime of 1.52 ns. A low dark current density of 2.03 x 10(-3) mA/cm(2) was achieved under 1 V bias at 77 K. The device showed a peak responsivity of 10.9 mA/W under 2 V bias at the wavelength of 6.4 mu m at 77K, and the corresponding detectivity was 5.78 x 10(8) cm.Hz(1/2)/W. These results demonstrated that these silicon-based DWELL photodetectors are very promising for future mid-infrared applications, which can enjoy the potential benefit from mid-infrared silicon photonics technology.
Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Linlin Fan,Lei Wang,Haiyan He,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1364/ol.524572

2024-01-01

Abstract:Tin-doped germanium quantum dots (Sn-doped Ge QDs)-decorated hexagonal silicon nanowires (h-Si NWs) were adopted to overcome the low infrared response of silicon and the excess dark current of germanium. High-quality Sn-doped Ge QDs with a narrow bandgap can be achieved through Ge-Sn co-sputtering on silicon nanowires by reducing the contact area between heterojunction materials and Sn-induced germanium crystallization. The absorption limit of the heterostructure is extended to 2.2 µm, and it is sensitive to 375-1550 nm light at 0 V, which has optimality at 1342 nm, with a photo-to-dark current ratio of over 815, a responsivity of 0.154 A/W, and a response time of 0.93 ms. The superior performance of the Sn-doped Ge QDs/h-Si NW photodetector in multiwavelength is attractive for multi-scenario applications.
Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates

Jiang Wu,Qi Jiang,Siming Chen,Mingchu Tang,Yuriy I. Mazur,Yurii Maidaniuk,Mourad Benamara,M. P. Semtsiv,W. Ted Masselink,Kimberly Sablon,Gregory J. Salamo,Huiyun Liu

DOI: https://doi.org/10.1021/acsphotonics.6b00076

IF: 7

2016-01-01

ACS Photonics

Abstract:High-performance, multispectral, and large-format infrared focal plane arrays are the long-demanded third-generation infrared technique for hyperspectral imaging, infrared spectroscopy, and target identification. A promising solution is to monolithically integrate infrared photodetectors on a silicon platform, which offers not only low-cost but high-resolution focal plane arrays by taking advantage of the well-established Si-based readout integrated circuits. Here, we report the first InAs/GaAs quantum dot (QD) infrared photodetectors monolithically integrated on silicon substrates by molecular beam epitaxy. The III–V photodetectors are directly grown on silicon substrates by using a GaAs buffer, which reduces the threading dislocation density to ∼106 cm–2. The high-quality QDs grown on Si substrates have led to long photocarrier relaxation time and low dark current density. Mid-infrared photodetection up to ∼8 μm is also achieved at 80 K. This work demonstrates that III–V photodetectors can directly be i...
Asymmetric Dark Current in Double Barrier Quantum Well Infrared Photodetectors

QD Zhuang,JM Li,LY Lin

DOI: https://doi.org/10.1117/12.331318

1998-01-01

Abstract:Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.
Two-colour In0.5Ga0.5As Quantum Dot Infrared Photodetectors on Silicon

Daqian Guo,Qi Jiang,Mingchu Tang,Siming Chen,Yuriy I. Mazur,Y. Maidaniuk,Mourad Benamara,Mykhaylo P. Semtsiv,William T. Masselink,Gregory J. Salamo,Huiyun Liu,Jiang Wu

DOI: https://doi.org/10.1088/1361-6641/aad83c

IF: 2.048

2018-01-01

Semiconductor Science and Technology

Abstract:An InGaAs quantum dot (QD) photodetector is directly grown on a silicon substrate. GaAs-on-Si virtual substrates with a defect density in the order of 106 cm−2 are fabricated by using strained-layer superlattice as dislocation filters. As a result of the high quality virtual substrate, fabrication of QD layer with good structural properties has been achieved, as evidenced by transmission electron microscopy and x-ray diffraction measurements. The InGaAs QD infrared photodetector is then fabricated on the GaAs-on-Si wafer substrate. Dual-band photoresponse is observed at 80 K with two response peaks around 6 and 15 μm.
Analysis of Dark Currents and Deep Level Traps in InP- and GaAs-based in 0.83 Ga 0.17 As Photodetectors

X. Y. Chen,Y. G. Zhang,Y. Gu,X. L. Ji,S. P. Xi,B. Du,Y. J. Ma,W. Y. Ji,Y. H. Shi,A. Z. Li

DOI: https://doi.org/10.1016/j.jcrysgro.2017.02.041

IF: 1.8

2017-01-01

Journal of Crystal Growth

Abstract:InP- and GaAs-based metamorphic In0.83Ga0.17As photodetectors were grown and investigated. Compared to InP-based photodetector, the dark current of GaAs-based photodetector at room temperature increased 2–3 times but still comparable, whereas at 77K the dark current increased 2–3 orders. The deep-level transient spectroscopy results reveal that a deep level trap state exists in the GaAs-based photodetector structure. The higher dark current in GaAs-based photodetector at low temperature was mainly ascribed to a deep level trap induced tunneling current. The deep trap centers can also induce non-radiative recombination with smaller thermal active energy in the GaAs-based photodetector structure.
Origin and suppression of dark current for high-performance colloidal quantum dot short-wave infrared photodetectors

Yan Yan,Hongyu Liu,Le Bian,Yanyan Dai,Boning Zhang,Shuangmei Xue,Ye Zhou,Jianlong Xu,Sui-Dong Wang

DOI: https://doi.org/10.1039/d4mh01094a

IF: 13.3

2024-11-02

Materials Horizons

Abstract:The development of cost-effective and highly sensitive short-wave infrared (SWIR) photodetectors is crucial for the expanding applications of SWIR imaging in civilian applications such as machine vision, autonomous driving, and augmented reality. Colloidal quantum dots (CQDs) have emerged as promising candidates for this purpose, offering distinct advantages over traditional III-V binary and ternary semiconductors. These advantages include the ability to precisely tune the bandgap through size modulation of CQDs and the ease of monolithic integration with Si readout integrated circuits (ROICs) via solution processing. Achieving a minimal reverse bias dark current density (Jd) while maintaining high external quantum efficiency is essential for enhancing the light detection sensitivity of CQDs-based SWIR photodiodes to a level competitive with III-V semiconductors. This challenge has garnered increasing research attention in recent years. Herein, the latest advancements in understanding and mitigating Jd in CQDs SWIR photodiodes are summarized. Starting with a brief overview of the material fundamentals of CQDs, the origins of Jd in CQDs photodiodes, including reverse injection from electrode, diffusion/drift currents, Shockley-Read-Hall generation/recombination currents, trap-assisted tunneling, and shunt/leakage currents, are discussed together with their latest research progresses about strategies adopted to suppress Jd. Finally, a brief conclusion and outlook on future research directions aimed at minimizing Jd and retaining high photoresponse of CQDs SWIR photodiodes are provided.

materials science, multidisciplinary,chemistry
Colloidal PbS Quantum Dot Photodiode Imager with Suppressed Dark Current

Ya Wang,Huicheng Hu,Mohan Yuan,Hang Xia,Xingchen Zhang,Jing Liu,Ji Yang,Shaoqiu Xu,Zhaorong Shi,Jungang He,Jianbing Zhang,Liang Gao,Jiang Tang,Xinzheng Lan

DOI: https://doi.org/10.1021/acsami.3c12918

IF: 9.5

2023-12-09

ACS Applied Materials & Interfaces

Abstract:Lead sulfide (PbS) colloidal quantum dots (CQDs) for photodetectors (PDs) have garnered great attention due to their potential use as low-cost, high-performance, and large-area infrared focal plane arrays. The prevailing device architecture employed for PbS CQD PDs is the p-i-n structure, where PbS CQD films treated with thiol molecules, such as 1,2-ethanedithiol (EDT), are widely used as p-type layers due to their favorable band alignment. However, PbS-EDT films face a critical challenge...

materials science, multidisciplinary,nanoscience & nanotechnology
Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors

Peng Cao,Tiancai Wang,Hongling Peng,Qiandong Zhuang,Wanhua Zheng

DOI: https://doi.org/10.3390/ma16134538

2023-06-23

Abstract:Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb substrates and InP substrates are demonstrated. The devices have a pBn structure that employs an AlGaAsSb thin layer as the electron barrier to suppress dark current density. The strain effect on the electrical performance of the devices was specifically studied through the growth of the pBn structure on different substrates, e.g., InP and GaSb, via a specific buffering technique to optimize material properties and minimize dark current. A lower device dark current density, down to 1 × 10-2 A/cm2 at room temperature (295 K), was achieved for the devices grown on the GaSb substrate compared to that of the devices on the InP substrate (8.6 × 10-2 A/cm2). The improved properties of the high-In component InGaAs layer and the AlGaAsSb electron barrier give rise to the low dark current of the photodetector device.
Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate

Jian Huang,Daqian Guo,Zhuo Deng,Wei Chen,Huiyun Liu,Jiang Wu,Baile Chen

DOI: https://doi.org/10.1109/jlt.2018.2859250

IF: 4.7

2018-01-01

Journal of Lightwave Technology

Abstract:Mid-infrared photodetector based on submonolayer (SML) quantum dot quantum cascade structure monolithically grown on silicon substrate has been demonstrated in this paper. Both the optical and electrical characteristics of the SML quantum dot quantum cascade photodetectors (QD-QCD) were analyzed quantitatively. The performances of these devices were compared with that on native GaAs substrate. A large resistance-area (R(0)A) product of 1.13 x 10(7) Omega.cm(2) is achieved at 77 K for the silicon-based devices, which is only roughly one order less than that on GaAs substrate. The device shows a normal-incident peak responsivity of 0.59 mA/W under zero bias at the wavelength of 6.2 mu m at 77 K, indicating a photovoltaic operation mode. Johnson noise limited specific detectivity is 3 x 10(10) cm.Hz(1/2)/W at 77 K, with photoresponse up to 100 K. These results suggest that the silicon-based QD-QCD in this paper is a very promising candidate for large format mid-infrared focal plane array and mid-infrared silicon photonics applications.
InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Zh Chen,O Baklenov,Et Kim,I Mukhametzhanov,J Tie,A Madhukar,Z Ye,Jc Campbell

DOI: https://doi.org/10.1016/s1350-4495(01)00109-8

IF: 2.877

2001-01-01

Journal of Applied Physics

Abstract:We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors (QDIPs) based on InAs/GaAs epitaxical island quantum dots (QDs) grown via the innovative punctuated island growth technique. The structural properties of the QDs were investigated with cross-sectional transmission electron microscopy and atomic force microscopy. The electronic properties of the QDs inserted in QDIP devices were investigated with photoluminescence (PL), PL excitation, and intra- and inter-band photocurrent spectroscopy. The influence of AlGaAs layers inserted into the QDIP active regions on the performance of dark current and inter- and intra-band photocurrent was examined. Initial results on intra-band responsivity and detectivity of these QDIPs at 77 K with undoped active region show promise for application.
Optimal Doping Density for Quantum-Well Infrared Photodetector Performance

Y. Yang,H. C. Liu,W. Z. Shen,N. Li,W. Lu,Z. R. Wasilewski,M. Buchanan

DOI: https://doi.org/10.1109/JQE.2009.2013119

IF: 2.5

2009-01-01

IEEE Journal of Quantum Electronics

Abstract:We present a systematic study on a set of n-type GaAs-AlGaAs quantum-well infrared photodetectors (QWIPs) with varying Si doping density in the wells. It is revealed that the increase in doping density enhances proportionally the absorption efficiency and responsivity while increasing exponentially the dark current and hence the dark current noise. We experimentally confirm the theoretically predi...
Dark Current Characterization And Simulation For In0.78ga0.22as Pin Photodetectors

Baiqing Liu,Xiaoli Ji,Yiming Liao,Feng Yan,Henqing Tang,Xue Li,Haimei Gong

DOI: https://doi.org/10.1117/12.2034957

2013-01-01

Abstract:The dark current characterization of InxGa1-xAs with x=0.78 have been investigated. Meanwhile, the dark current related deep level trap with E-t= 0.26 eV is detected by using Deep-Level Transient Spectroscopy (DLTS). 2D simulation of dark current shows that SRH recombination, trap-assisted tunneling and band-to-band tunneling currents are the main contributors to the dark current of InxGa1-xAs(x=0.78) detector. To further improve the dark current characteristic, we need to improve the material growth.
Suppressing the Dark Current in Quantum Dot Infrared Photodetectors by Controlling Carrier Statistics

Byung Ku Jung,Ho Kun Woo,Chanho Shin,Taesung Park,Ning Li,Kyu Joon Lee,Woosik Kim,Jung Ho Bae,Jae‐Pyoung Ahn,Tse Nga Ng,Soong Ju Oh

DOI: https://doi.org/10.1002/adom.202101611

IF: 9

2021-11-09

Advanced Optical Materials

Abstract:Abstract Lead sulfide colloidal quantum dot photodiodes (PbS QDPDs) exhibit a high energy conversion efficiency for infrared detection. Despite the high photoinduced current, the performance of PbS QDPDs is limited by the high dark current which is rarely investigated. Understanding the dark current in PbS QDPDs is critical to improving the detectivity of PbS QDPDs. Herein, it is demonstrated that minority carriers of I‐passivated PbS films and trap sites of EDT‐passivated PbS films are related to the dark current of PbS QDPD. Utilizing annealing and low‐temperature ligand exchange processes, the dark current density can be decreased almost tenfold by suppressing the minority carrier diffusion in the PN junction and trap‐assisted charge injection from the electrode. PN junction simulation, space charge limited current measurements, as well as structural, optical, and chemical characterizations are conducted to elucidate the origins of the dark current suppression. The authors achieve the lowest dark current density of 2.9 × 10 −5 mA cm −2 at −1 V among PbS‐based QDPDs and a high detectivity of 6.7 × 10 12 Jones at 980 nm. It is believed that this work provides fundamental understanding of carrier statistics in nanomaterials and device performance as well as a technological basis for realizing low‐cost high‐performance optoelectronic devices.

materials science, multidisciplinary,optics
Investigation of Dark Current Mechanisms on Type-Ii InAs/GaSb Superlattice Very Long Wavelength Infrared Detectors

Xiaochao Li,Dongwei Jiang,Yong Zhang,Dongbo Wang,Qingjiang Yu,Tong Liu,Honghu Ma,Liancheng Zhao

DOI: https://doi.org/10.1088/0022-3727/49/16/165105

2016-01-01

Abstract:An analytical approach to isolating the contribution of surface leakage current from bulk dark current by simulating the current-voltage characteristic of InAs/GaSb superlattice detectors is presented in this paper. It is found that for all the mesa sizes used, the dark current is dominated by the surface component under low reverse bias, and the proportion of surface leakage current to total dark current increases with decreasing mesa size. The limiting dark current mechanisms and main parameters of the InAs/GaSb T2SL detectors were analyzed using a theoretical model including the contribution of surface leakage. We found that surface leakage currents provide a significant contribution, while the ohmic shunt current originating from threading dislocations is not significant.
Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photodetector

Zhijian Shen,Zhuo Deng,Xuyi Zhao,Jian Huang,Lu Yao,Xinbo Zou,Chunfang Cao,Qian Gong,Baile Chen

DOI: https://doi.org/10.1109/jlt.2020.3034657

IF: 4.7

2021-03-01

Journal of Lightwave Technology

Abstract:Zhijian Shen, Zhuo Deng, Xuyi Zhao, Jian Huang, Lu Yao, Xinbo Zou, Chunfang Cao, Qian Gong, Baile Chen<br/>In this article, a long-wave infrared InAs/GaAs sub-monolayer quantum dot quantum cascade photodetector (SML QD-QCD) grown on GaAs ... [J. Lightwave Technol. 39, 1489-1496 (2021)]

engineering, electrical & electronic,optics,telecommunications
Progress and prospects for quantum dots in a well infrared photodetectors.

T. Vandervelde,S. Krishna

DOI: https://doi.org/10.1166/JNN.2010.2028

2010-03-01

Journal of Nanoscience and Nanotechnology

Abstract:Over the past fifteen years, there has been significant interest in developing intersubband quantum dot (QD) detectors for the mid-(MWIR) and long-wave infrared (LWIR) regimes. This class of detectors is generally referred to as quantum dot infrared photodetectors, or QDIPs. At present, one of the leading technologies is that of the quantum dots-in-a-well infrared photodetector, called a DWELL-IP or just a DWELL detector. The DWELL name comes from the active region's structure, which consists of a layer of quantum dots imbedded in (or in some cases grown on) a quantum well. This dot/well combination is similarly surrounded by a barrier material. Here, we identify the major players and their contributions to the evolution of the DWELL-IP. While this dot/well/barrier material combination originally consisted of InAs/InGaAs/GaAs, the materials used has widened in recent years. This paper reviews the progress to date for this quickly advancing field. Some of these advancements have come from the additional focus that has been brought to bear on the physical understanding and experimental mechanics of the structure itself. Explorations into the multi-spectral nature of these detectors have also created unique applications for these detectors. This type of QDIP is now becoming the dominant detector of its class and is quickly heading for parity with quantum well infrared photodetectors (QWIPs) that are presently commercially dominant. Given the potential utility of the infrared spectrum for applications in medicine, military, industrial, and academic fields the DWELL-IPs potential to be an inexpensive, versatile, multi-spectral, infrared detector indicates it has a bright future.

Medicine,Materials Science,Engineering,Physics
Analysis dark-current in GeSi/Si superlattice PIN photodetector

Na Li,Enke Liu,Guozheng Li,Xuelin Xu

1998-01-01

Abstract:The leakage phenomenon in PIN photodetector in which absorbing material is GeSi/Si superlattice, is analyzed. The theory and experiments show that dark current density of the PIN diode detector is about 10-5 A/cm2 when Ge content x=0.6 which is decided by width of band gap. The high dark current of the device is caused mainly by surface effect and fabrication processing.
Ultimate performance of Quantum Well Infrared Photodetectors in the tunneling regime

E. Lhuillier,I. Ribet-Mohamed,M. Tauvy,A. Nedelcu,V. Berger,E. Rosencher

DOI: https://doi.org/10.1016/j.infrared.2009.05.003

2009-05-13

Abstract:Thanks to their wavelength diversity and to their excellent uniformity, Quantum Well Infrared Photodetectors (QWIP) emerge as potential candidates for astronomical or defense applications in the very long wavelength infrared (VLWIR) spectral domain. However, these applications deal with very low backgrounds and are very stringent on dark current requirements. In this paper, we present the full electro-optical characterization of a 15 micrometer QWIP, with emphasis on the dark current measurements. Data exhibit striking features, such as a plateau regime in the IV curves at low temperature (4 to 25 K). We show that present theories fail to describe this phenomenon and establish the need for a fully microscopic approach.

Mesoscale and Nanoscale Physics

Dark Current Analysis of Mid-Wave Quantum Dots-in-a-Well Photodetectors Monolithically Grown on Silicon Substrate

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Monolithically Integrated InAs/GaAs Quantum Dot Mid-Infrared Photodetectors on Silicon Substrates

Asymmetric Dark Current in Double Barrier Quantum Well Infrared Photodetectors

Two-colour In0.5Ga0.5As Quantum Dot Infrared Photodetectors on Silicon

Analysis of Dark Currents and Deep Level Traps in InP- and GaAs-based in 0.83 Ga 0.17 As Photodetectors

Origin and suppression of dark current for high-performance colloidal quantum dot short-wave infrared photodetectors

Colloidal PbS Quantum Dot Photodiode Imager with Suppressed Dark Current

Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors

Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Optimal Doping Density for Quantum-Well Infrared Photodetector Performance

Dark Current Characterization And Simulation For In0.78ga0.22as Pin Photodetectors

Suppressing the Dark Current in Quantum Dot Infrared Photodetectors by Controlling Carrier Statistics

Investigation of Dark Current Mechanisms on Type-Ii InAs/GaSb Superlattice Very Long Wavelength Infrared Detectors

Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photodetector

Progress and prospects for quantum dots in a well infrared photodetectors.

Analysis dark-current in GeSi/Si superlattice PIN photodetector

Ultimate performance of Quantum Well Infrared Photodetectors in the tunneling regime