Abstract:In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Germanium Quantum Dot Infrared Photodetectors Addressed by Self-Aligned Silicon Nanowire Electrodes.

Progress and prospects for quantum dots in a well infrared photodetectors.

Recent Progress on Infrared Photodetectors Based on InAs and InAsSb Nanowires

Ge Quantum Dot Infrared Photo-Detector

Graphene/silicon-quantum-dots/Si Schottky-PN cascade heterojunction for short-wavelength infrared photodetection

Submonolayer quantum dot quantum cascade long-wave infrared photodetector grown on Ge substrate

Study Of Self-Assembled Ge Quantum Dot Infrared Photodetectors

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Si-based Ge Quantum Dot Infrared Photodetectors

Self-power, multiwavelength photodetector based on a Sn-doped Ge quantum dots/hexagonal silicon nanowire heterostructure

Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

Sub-monolayer quantum dot quantum cascade mid-infrared photodetector

Room-temperature Near-Infrared Photodetectors Based on Single Heterojunction Nanowires.

High‐performance silicon‐based PbSe-CQDs infrared photodetector