Abstract:Recent atomic resolution scanning tunneling microscope (STM) measurements discovered remarkable electronic inhomogeneity, i.e., nanoscale spatial variations of the local density of states (LDOS) and the superconducting energy gap, in the high-T-c superconductor Bi2Sr2CaCu2O8 + x. Based on the experimental findings, we conjectured that the inhomogeneity arises from variations in local oxygen doping level and may be generic of doped Mott insulators. In this paper, we provide theoretical support for this picture, We study a doped Mott insulator within a generalized t-J model, where doping is accompanied by ionic Coulomb potentials centered in the BiO plane located a distance d(s) away from the CuO2 plane. We solve, at the mean-field level, a set of spatially unrestricted Bogoliubov-de Gennes equations self-consistently to obtain the distributions of the hole concentration, the valence bond, and the pairing order parameters for different nominal/average doping concentrations. We calculate the LDOS spectrum, the integrated LDOS, and the local superconducting gap as those measured by STM, make detailed comparisons to experiments, and find remarkable agreement with the experimental data. We emphasize the unconventional screening of the ionic potential in a doped Mott insulator and show that nonlinear screening dominates on nanometer scales, comparable to the short coherence length of the superconductor. which is the origin of the electronic inhomogeneity. It leads to strong inhomogeneous redistribution of the local hole density and promotes the notion of local doping concentration (LDC). We find that the inhomogeneity structure manifests itself at all energy scales in the STM tunneling differential conductance. and elucidate the similarity and the differences between the data obtained in the constant tunneling current mode and the same data normalized to reflect constant tip-to-sample distance. We also discuss the underdoped case where nonlinear screening of the ionic potential turns the spatial electronic structure into a percolative mixture of patches with smaller pairing gaps embedded in a background with larger gaps to single particle excitations.

Experimental Observation of Pseudogap in a Modulation-Doped Mott Insulator: Sn/Si(111)-( 3×3 )R30°

Pseudogap metal and magnetization plateau from doping moiré Mott insulator

Slave fermion interpretation of the pseudogap in doped Mott insulators

Fluctuating Stripes at the Onset of the Pseudogap in the High-Tc Superconductor Bi2Sr2CaCu2O8+x

Pseudogap Opening, Superconducting Fluctuation and Vortex-Like Excitation above Tc in Slightly Overdoped Bi2Sr2CaCu2O8+δ

Pseudogap in electron-doped cuprates: Strong correlation leading to band splitting

Pseusogap in Cuprates by Electronic Raman Scattering

Lower Pseudogap Phase of Mott Insulators: A Spin/vortex Liquid State

Observation of pseudogap in SnSe2 atomic layers grown on graphite

Inhomogeneousd-wave Superconducting State of a Doped Mott Insulator

Thermal Hall Effect and Neutral Spinons in a Doped Mott Insulator

Monte Carlo study of the pseudogap and superconductivity emerging from quantum magnetic fluctuations

Anomalous Spectral Broadening and Symmetry Breaking in the Pseudogap State of Bi2201

Electronic nature of the pseudogap in electron-doped Sr 2 IrO 4

Evidence for electron–hole crystals in a Mott insulator

Direct Visualization of Ambipolar Mott Transition in Cuprate CuO 2 Planes

Direct Visualization of Ambipolar Mott Transition in Cuprate CuO<sub>2</sub> Planes

Localized In-Gap State in a Single Electron Doped Mott Insulator

Experimental Observation of Gapped Topological Surface States in Sb-doped MnBi4Te7

Avoided metallicity in a hole-doped Mott insulator on a triangular lattice