Evidence for electron–hole crystals in a Mott insulator

Zhizhan Qiu,Yixuan Han,Keian Noori,Zhaolong Chen,Mikhail Kashchenko,Li Lin,Thomas Olsen,Jing Li,Hanyan Fang,Pin Lyu,Mykola Telychko,Xingyu Gu,Shaffique Adam,Su Ying Quek,Aleksandr Rodin,A. H. Castro Neto,Kostya S. Novoselov,Jiong Lu
DOI: https://doi.org/10.1038/s41563-024-01910-3
IF: 41.2
2024-06-04
Nature Materials
Abstract:The coexistence of correlated electron and hole crystals enables the realization of quantum excitonic states, capable of hosting counterflow superfluidity and topological orders with long-range quantum entanglement. Here we report evidence for imbalanced electron–hole crystals in a doped Mott insulator, namely, α-RuCl 3 , through gate-tunable non-invasive van der Waals doping from graphene. Real-space imaging via scanning tunnelling microscopy reveals two distinct charge orderings at the lower and upper Hubbard band energies, whose origin is attributed to the correlation-driven honeycomb hole crystal composed of hole-rich Ru sites and rotational-symmetry-breaking paired electron crystal composed of electron-rich Ru–Ru bonds, respectively. Moreover, a gate-induced transition of electron–hole crystals is directly visualized, further corroborating their nature as correlation-driven charge crystals. The realization and atom-resolved visualization of imbalanced electron–hole crystals in a doped Mott insulator opens new doors in the search for correlated bosonic states within strongly correlated materials.
materials science, multidisciplinary,physics, applied,chemistry, physical, condensed matter
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