Abstract:Recent atomic resolution scanning tunneling microscope (STM) measurements discovered remarkable electronic inhomogeneity, i.e., nanoscale spatial variations of the local density of states (LDOS) and the superconducting energy gap, in the high-T-c superconductor Bi2Sr2CaCu2O8 + x. Based on the experimental findings, we conjectured that the inhomogeneity arises from variations in local oxygen doping level and may be generic of doped Mott insulators. In this paper, we provide theoretical support for this picture, We study a doped Mott insulator within a generalized t-J model, where doping is accompanied by ionic Coulomb potentials centered in the BiO plane located a distance d(s) away from the CuO2 plane. We solve, at the mean-field level, a set of spatially unrestricted Bogoliubov-de Gennes equations self-consistently to obtain the distributions of the hole concentration, the valence bond, and the pairing order parameters for different nominal/average doping concentrations. We calculate the LDOS spectrum, the integrated LDOS, and the local superconducting gap as those measured by STM, make detailed comparisons to experiments, and find remarkable agreement with the experimental data. We emphasize the unconventional screening of the ionic potential in a doped Mott insulator and show that nonlinear screening dominates on nanometer scales, comparable to the short coherence length of the superconductor. which is the origin of the electronic inhomogeneity. It leads to strong inhomogeneous redistribution of the local hole density and promotes the notion of local doping concentration (LDC). We find that the inhomogeneity structure manifests itself at all energy scales in the STM tunneling differential conductance. and elucidate the similarity and the differences between the data obtained in the constant tunneling current mode and the same data normalized to reflect constant tip-to-sample distance. We also discuss the underdoped case where nonlinear screening of the ionic potential turns the spatial electronic structure into a percolative mixture of patches with smaller pairing gaps embedded in a background with larger gaps to single particle excitations.

Direct Visualization of Ambipolar Mott Transition in Cuprate CuO 2 Planes

Direct Visualization of Ambipolar Mott Transition in Cuprate CuO<sub>2</sub> Planes

Momentum-resolved Visualization of Electronic Evolution in Doping a Mott Insulator

Visualizing the atomic scale electronic structure of the Ca2CuO2Cl2 Mott insulator

Reentrance of Interface Superconductivity in a High-Tc Cuprate Heterostructure

Visualizing the atomic-scale electronic structure of the Ca 2 CuO 2 Cl 2 Mott insulator

Doping Induced Mott Collapse and the Density Wave Instabilities in (Sr_1-Xla_x)_3ir_2o_7

Disappearance of Nodal Gap Across the Insulator–superconductor Transition in a Copper-Oxide Superconductor

Electronic Evolution from the Parent Mott Insulator to a Superconductor in Lightly Hole-Doped Bi2Sr2CaCu2O8 + Δ*

Inhomogeneousd-wave Superconducting State of a Doped Mott Insulator

Metal-insulator transition in copper oxides induced by apex displacements

Diminishing Mott gap by doping electrons through depositing one monolayer thin film of Rb on Ca$_{2}$CuO$_{2}$Cl$_{2}$

Doping induced Mott collapse and the density wave instabilities in (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$

Doping Induced Mott Collapse and Possible Density Wave Instabilities in (sr 1−x La X ) 3 Ir 2 O 7

Visualization and Control of Oxygen Dopant Ordering in a Cuprate Superconductor

Real-space characterization of tetragonal CuO epitaxial films

Instabilities of doped mott insulators and the properties of high-temperature superconductors

Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 Mott insulator

Mott Physics, Sign Structure, Ground State Wavefunction, and High-Tc Superconductivity

Visualization of Dopant Oxygen Atoms in a Bi2Sr2CaCu2O8+δ Superconductor

Doped high-Tc cuprate superconductors elucidated in the light of zeros and poles of electronic Green's function