60 GHz Germanium Photodetector Using Wire Bonding Technology

Guanyu Chen,Yu Yu,Chunlei Sun,Beibei Wu,Shupeng Deng,Lei Liu,Xinliang Zhang

DOI: https://doi.org/10.1364/acpc.2015.asu5a.2

2015-01-01

Abstract:We propose a new method for increasing the bandwidth of the Ge photodetector using wire bonding technology. Simulation and experimental results show that the bandwidth can be extended from less than 30GHz to over 60GHz.

What problem does this paper attempt to address?

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Yiding Lin,Danhao Ma,Kwang Hong Lee,Jin Zhou,Xin Guo,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1109/group4.2018.8478713

2018-01-01

Abstract:A germanium (Ge) MSM photodetector is demonstrated with significantly-enhanced photo-response at the L-band and beyond, using SiNx stressor at the waveguide sidewalls created by a self-aligned dry etching method. This provides a CMOS-compatible solution for Ge detectors for broadband high-speed integrated photonic applications.
Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

Yiding Lin,Danhao Ma,Rui-Tao Wen,Kwang Hong Lee,Xin Guo,Jin Zhou,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1109/group4.2019.8925937

2019-01-01

Abstract:Germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors were demonstrated with a 60 nm extension on the absorption coverage and a ∼2× enhancement on the quantum efficiency across the L-band.
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

Yuan Dong,Wei Wang,Shengqiang Xu,Dian Lei,Xiao Gong,Xin Guo,Hong Wang,Shuh-Ying Lee,Wan-Khai Loke,Soon-Fatt Yoon,Yee-Chia Yeo

DOI: https://doi.org/10.1364/oe.25.015818

IF: 3.8

2017-01-01

Optics Express

Abstract:We report the demonstration of a germanium-tin (Ge 0.90.121-1-
Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

wei dong,toru hirohata,kazutoshi nakajima,xiaoping wang

DOI: https://doi.org/10.1109/OMN.2013.6659060

2013-01-01

Abstract:Finite-difference-time-domain (FDTD) computer simulations reveal interesting features of Germanium (Ge) subwavelength nanostructures designed in x-y plane on substrate of InP with normal incidence, which can be applied in quantum well infrared photodetector (QWIP). Unlike the mechanism of excellent near field effects through periodic metallic nanostructures, large intensity of Ez field is achieved at near-infrared range by subwavelength arrays of Ge which has no surface plasmons (SPs). The evanescent Ez field generated along the surface of Ge is interpreted due to waveguide mode interference of coupled scattering. The existence of the enhanced field is confirmed by comparing the Fourier transform infrared (FTIR) spectra of real-fabricated samples with simulation outcomes. Positions of resonant peaks obtained in experiment are in good agreement with those of simulation. © 2013 IEEE.
Germanium Photodiodes With 3-dB Bandwidths >110 GHz and L-Band Responsivity of >0.7 A/W

Daniel Steckler,Stefan Lischke,Aleksandra Kroh,Anna Peczek,Galina Georgieva,Lars Zimmermann

DOI: https://doi.org/10.1109/lpt.2024.3398359

IF: 2.6

2024-05-21

IEEE Photonics Technology Letters

Abstract:We present germanium p-i-n photodiodes with opto-electrical 3-dB bandwidths >110 GHz while exhibiting high internal responsivity >0.7 AW1 at 1620 nm wavelength. Compared to our previous work, this is an improvement of >35 % in internal responsivity without sacrificing the photo detectors bandwidths. This was achieved by the introduction of a local reduction of the silicon waveguide thickness right below the germanium body, which improves optical coupling (from the silicon waveguide into the germanium region) and confinement. In this work we study three photodiode device variants in which germanium is laterally sandwiched between complementary in-situ doped Si regions. This approach enables the side-by side realization of germanium p-i-n photodiodes with different widths, featuring different combinations of OE bandwidths and responsivities. We further investigate on the optical-power handling capabilities of these photodiodes by means of responsivity and bandwidth.

engineering, electrical & electronic,optics,physics, applied
Design of Travelling-wave Photodetectors Impedance-matched over 135-Ghz Bandwidth

Pengfei Xu,Yujie Chen,Jie Liu,Yanfeng Zhang,Guoxuan Zhu,Qingsheng Xiao,Bingchi Liu,Hui Chen,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2015.asu5i.5

2015-01-01

Abstract:Electrical design for an unloaded transmission line of a travelling-wave photodetector is performed, enabling the 50-Ω impedance matching in a large frequency range from 1 to 135 GHz. Considering the velocity match of the optical waveguide and the electrical transmission line, a coplanar waveguide transmission line with adequately large gap width is adopted for extending the optical path of the waveguide.
103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

Yang Shi,Xiang Li,Mingjie Zou,Yu Yu,Xinliang Zhang

DOI: https://doi.org/10.1364/prj.495958

IF: 7.6

2023-12-07

Photonics Research

Abstract:Yang Shi, Xiang Li, Mingjie Zou, Yu Yu, Xinliang Zhang High-performance germanium photodiodes are crucial components in silicon photonic integrated circuits for large-capacity data ... [Photon. Res. 12, 1-6 (2024)]

optics
High efficiency resonant-metasurface germanium photodetector with ultra-thin intrinsic layer

Jinwen Song,Shuai Yuan,Jinsong Xia

DOI: https://doi.org/10.48550/arXiv.1904.05744

2019-04-09

Abstract:Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications. Silicon-based Germanium photodetectors exhibit great potential in reducing the cost and power dissipation, due to its compatibility of monolithic integration with signal-processing electronics. We report the first demonstration of normal incident resonant-metasurface germanium photodetector, to address the trade-off between quantum efficiency, bandwidth and wavelength coverage for free-space detectors. With an ultra-thin intrinsic layer thickness of 350 nm, a high external quantum efficiency of more than 60% and clearly open eyes at the speed of 20 Gbps are achieved, for a 30 {\mu}m-diameter device. The photodetector employs multiple trapped-mode resonances to enhance the localized electromagnetic field, which not only enhances the external quantum efficiency by more than 300% at 1550 nm, but also extends to the whole C band. Further simulation and measurement with small incident spot size show the feasibility to achieve >50 GHz 3 dB bandwidth by simply reducing the mesa size, with minor sacrifice of the enhanced absorption. This work paves the way for the future development of low-cost, high efficiency normal incident germanium photodetectors operating at data rates of 50 Gbps or higher.

Instrumentation and Detectors,Optics
Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Linlin Fan,Lei Wang,Haiyan He,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.1364/ol.524572

2024-01-01

Abstract:Tin-doped germanium quantum dots (Sn-doped Ge QDs)-decorated hexagonal silicon nanowires (h-Si NWs) were adopted to overcome the low infrared response of silicon and the excess dark current of germanium. High-quality Sn-doped Ge QDs with a narrow bandgap can be achieved through Ge-Sn co-sputtering on silicon nanowires by reducing the contact area between heterojunction materials and Sn-induced germanium crystallization. The absorption limit of the heterostructure is extended to 2.2 µm, and it is sensitive to 375-1550 nm light at 0 V, which has optimality at 1342 nm, with a photo-to-dark current ratio of over 815, a responsivity of 0.154 A/W, and a response time of 0.93 ms. The superior performance of the Sn-doped Ge QDs/h-Si NW photodetector in multiwavelength is attractive for multi-scenario applications.
Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Yiding Lin,Danhao Ma,Rui-Tao Wen,Kwang Hong Lee,Xin Guo,Jin Zhou,Hong Wang,Chuan Seng Tan,Jurgen Michel

DOI: https://doi.org/10.1364/cleo_si.2019.sth4o.2

2019-01-01

Abstract:Germanium photodetector, formed with a self-aligned dry etching method, together with a tensile silicon nitride sidewall stressor, exhibits a strain profile with improved uniformity and a $\sim 2\times$ enhancement on the quantum efficiency at the $L$ -band, © 2019 The Author(s)
A Compact Evanescently-Coupled Germanium Pin Waveguide Photodetector

Zhijuan Tu,Kaibo Liu,Huaxiang Yi,Runxi Zhou,Xingjun Wang,Zhiping Zhou,Zhangyuan Chen

DOI: https://doi.org/10.1117/12.2001221

2012-01-01

Abstract:A compact 1.6x10 mu m(2) germanium pin waveguide photodetector was demonstrated on a Silicon-on-Insulator substrate. The dark current of the photodetector was measured to be 0.66 mu A at -1V bias voltage, which is much lower than recently reported. The photodetector exhibited a 3-dB bandwidth of 20GHz at the wavelength of 1.55 mu m. A clear open eye diagram at 10Gb/s was also obtained.
Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

Zhujun Wei,Hui Yu,Zhilei Fu,Penghui Xia,Qiang Zhang,Nannan Ning,Qikai Huang,Yuehai Wang,Jianyi Yang

DOI: https://doi.org/10.1364/oe.476218

IF: 3.8

2022-01-01

Optics Express

Abstract:We demonstrate Ge/Si high-power and high-speed distributed traveling wave photodetectors (TWPD) by using the inductive gain peaking technique. Input terminals of TW electrodes are open to enhance RF output efficiencies to output loads. Furthermore, optimized on-chip spiral inductors are incorporated at output terminals of TW electrodes to alleviate bandwidth degradations caused by the absences of matching impedances. A comprehensive equivalent circuit model is developed to calculate the frequency response of this scheme. It is used to optimize the design, and then is validated by measurement results. After inducing on-chip inductors, the bandwidths of 4-stage and 8-stage TWPDs are improved from 32 to 44 GHz and 16 to 24 GHz, respectively. Maximum RF output powers of 4-stage and 8-stage TWPDs with on-chip inductors are measured to be 5.7 dBm and 9.4 dBm at 20 GHz, respectively.
Ge-based Triple-Band Infrared Photodetector

Jiaqi Zhu,Hanlun Xu,Kai Li,He Zhu,Ning Dai,Huizhen Wu

DOI: https://doi.org/10.7567/apex.11.114102

IF: 2.819

2018-01-01

Applied Physics Express

Abstract:A triple-band infrared photodetector is developed by doping sulfur into germanium. The photocurrent spectrum at 20 K shows that there are three response bands at about 1.4, 1.6, and 6.5 µm, indicating the realization of triple-band detection. The triple response bands are attributed to the electronic transitions from the valence band to the conduction band at the Γ and L points, and from the impurity band to the conduction band, respectively. At 4 K, the overall blackbody detectivity is ∼1.0 × 1011 cm Hz1/2/W. We provide a new route for realizing multiband infrared detectors.
40Gbps Optical Receiver Based on Germanium Waveguide Photodetector Hybrid-Integrated with 90nm CMOS Amplifier

Huapu Pan,Solomon Assefa,William M. J. Green,Daniel M. Kuchta,Clint L. Schow,Alexander V. Rylyakov,Benjamin G. Lee,Christian W. Baks,Steven M. Shank,Yurii A. Vlasov

DOI: https://doi.org/10.1364/cleo_si.2012.cth5d.5

2012-01-01

Abstract:A receiver based on Ge waveguide photodetector wire-bonded to 90nm CMOS amplifier built in specialty SOI wafer demonstrates error-free operation up to 40Gbps. At 25Gbps the receiver achieved a sensitivity of -8.3dBm with 3.3pJ/bit power-efficiency.
High-speed Ge-on-GaAs Photodetector

Linze Li,Rui Pan,Zhiyang Xie,Yao Lu,Jiaxiang Chen,Xinbo Zou,Ziyuan Yuan,Menglin Chang,Hong Lu,Baile Chen

DOI: https://doi.org/10.1364/oe.459664

IF: 3.8

2022-01-01

Optics Express

Abstract:In this work, a germanium (Ge) on gallium arsenide (GaAs) photodetector is demonstrated with the optical response from 850 nm to 1600 nm, which has potential for monolithic integration with VCSELs on GaAs platform as transceiver working beyond 900 nm. The device exhibits a responsivity of 0.35A/W, 0.39 A/W and 0.11 A/W at 1000 nm, 1310 urn and 1550 nm, respectively and dark current of 8 nA at -1 V. The 10 um diameter back-illuminated device achieves a 3-dB bandwidth of 9.3 GHz under -2 V bias. A donor-like trap at the interface between the Ge and GaAs collection layers is verified by capacitance-voltage curve and deep-level transient spectroscopy (DLTS) measurement, which impedes the depletion in GaAs collection layers. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.

Shengqiang Xu,Wei Wang,Yi-Chiau Huang,Yuan Dong,Saeid Masudy-Panah,Hong Wang,Xiao Gong,Yee-Chia Yeo

DOI: https://doi.org/10.1364/OE.27.005798

IF: 3.8

2019-01-01

Optics Express

Abstract:We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode, exhibiting a 3-dB bandwidth (f(3-dB)) above 10 GHz for the first time. The epitaxy of device layer stacks was performed on a standard (001)-oriented 300 mm Si substrate by using reduced pressure chemical vapor deposition (RPCVD). The results showed promise for large-scale manufacturing. To our knowledge, this is also the first photodiodes-on-Si with direct radio-frequency (RF) measurement to quantitatively confirm high-speed functionality with tens of GHz f(3-dB) at 2 pm, which is considered as a promising candidate for the next data communication window. This work illustrates the potential for using GeSn to extend the utility of Si photonics in 2 gm band integrated optical transceivers for communication applications. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
On-chip germanium photodetector with interleaved junctions for the 2-μm wave band

Jianing Wang,Xi Wang,Yihang Li,Yanfu Yang,Qinghai Song,Ke Xu

DOI: https://doi.org/10.1364/ol.515378

IF: 3.6

2024-02-16

Optics Letters

Abstract:Jianing Wang, Xi Wang, Yihang Li, Yanfu Yang, Qinghai Song, Ke Xu Recently, the 2-μm wave band has gained increased interest due to its potential application for the next-generation optical ... [Opt. Lett. 49, 1085-1088 (2024)]

optics
High Speed (<tex>$\boldsymbol{f}_{3-\boldsymbol{d}\boldsymbol{B}}$</tex> above 10 GHz) Photo Detection at Two-micron-wavelength Realized by GeSn/Ge Multiple-quantum-well Photodiode on a 300 mm Si Substrate

Shengqiang Xu,Wei Wang,Yi-Chiau Huang,Yuan Dong,Saeid Masudy-Panah,Hong Wang,Xiao Gong,Yee-Chia Yeo

DOI: https://doi.org/10.1109/IEDM.2018.8614497

2018-01-01

Abstract:High speed photo detection at two-micron-wavelength has been achieved with a GeSn/Ge multiple-quantum-well (MQW) photodiode (PD), demonstrating a 3-dB bandwidth (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3-dB</sub> ) above 10 GHz for the first time. The device layer stack was grown on a standard 300 mm (001) Si substrate using RPCVD, showing potential for large-scale integration. Radio frequency (RF) characterization was performed using 2- μm RF optical measurement setup. To our knowledge, this is also the first PDs on Si with direct RF measurement to quantitatively confirm the high speed functionality at 2 μm.
High-Power Ge/Si Waveguide Photodetector

Hengzhen Cao,Yuluan Xiang,Weichao Sun,Jin Xie,Jingshu Guo,Zejie Yu,Liu,Yaocheng Shi,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.4c00173

IF: 7

2024-01-01

ACS Photonics

Abstract:A lateral germanium/silicon waveguide photodetector with a side-coupling structure is proposed and realized. For the present photodetector, the input light is split into four channels, which are gradually coupled into two parallel germanium waveguides by adiabatic side-coupling. In this way, uniform optical field distribution is achieved and the space-charge effect is eliminated greatly even with high optical power. The experimental results show that the responsivity is still as high as 0.68 A/W even for an input optical power of 28 mW and the saturation photocurrent is more than 19.5 mA. The present photodetector features a broad bandwidth of >40 GHz for detecting low optical power, while the bandwidth is still more than 20 GHz for the input optical power of 12.4 mW (the output current is 10.2 mA). The open eye-diagrams for receiving the 25 and 50 Gbps data are demonstrated with the photocurrents of 16 and 8.5 mA, respectively. The present side-coupling Ge/Si photodetector exhibits excellent performances for high-power detection compared with the conventional one.
High Speed (F(3-Db) Above 10 Ghz) Photo Detection At Two-Micron-Wavelength Realized By Gesn/Ge Multiple-Quantum-Well Photodiode On A 300 Mm Si Substrate

Shengqiang Xu,Wei Wang,Yi-Chiau Huang,Yuan Dong,Saeid Masudy-Panah,Hong Wang,Xiao Gong,Yee-Chia Yeo

DOI: https://doi.org/10.1109/iedm.2018.8614497

2018-01-01

Abstract:High speed photo detection at two-micronwavelength has been achieved with a GeSn/Ge multiplequantum-well (MQW) photodiode (PD), demonstrating a 3 -dB bandwidth (f(3)(-dB)) above 10 GHz for the first time. The device layer stack was grown on a standard 300 mm (001) Si substrate using RPCVD, showing potential for large-scale integration. Radio frequency (RF) characterization was performed using 2-mu m RF optical measurement setup. To our knowledge, this is also the first PDs on Si with direct RF measurement to quantitatively confirm the high speed functionality at 2 mu m.

60 GHz Germanium Photodetector Using Wire Bonding Technology

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth.

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Germanium Photodiodes With 3-dB Bandwidths >110 GHz and L-Band Responsivity of >0.7 A/W

Design of Travelling-wave Photodetectors Impedance-matched over 135-Ghz Bandwidth

103 GHz germanium-on-silicon photodiode enabled by an optimized U-shaped electrode

High efficiency resonant-metasurface germanium photodetector with ultra-thin intrinsic layer

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

A Compact Evanescently-Coupled Germanium Pin Waveguide Photodetector

Silicon-based High-Power Traveling Wave Photodetector with Inductive Gain Peaking.

Ge-based Triple-Band Infrared Photodetector

40Gbps Optical Receiver Based on Germanium Waveguide Photodetector Hybrid-Integrated with 90nm CMOS Amplifier

High-speed Ge-on-GaAs Photodetector

High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate.

On-chip germanium photodetector with interleaved junctions for the 2-μm wave band

High Speed (<tex>$\boldsymbol{f}_{3-\boldsymbol{d}\boldsymbol{B}}$</tex> above 10 GHz) Photo Detection at Two-micron-wavelength Realized by GeSn/Ge Multiple-quantum-well Photodiode on a 300 mm Si Substrate

High-Power Ge/Si Waveguide Photodetector

High Speed (F(3-Db) Above 10 Ghz) Photo Detection At Two-Micron-Wavelength Realized By Gesn/Ge Multiple-Quantum-Well Photodiode On A 300 Mm Si Substrate