Bandgap Renormalization and Indirect Optical Absorption in MgSiN2 at Finite Temperature

Dangqi Fang
DOI: https://doi.org/10.1063/5.0068833
IF: 2.877
2021-01-01
Journal of Applied Physics
Abstract:We investigate the temperature effect on the electronic band structure and optical absorption property of wide-band-gap ternary nitride MgSiN_2 using first-principles calculations. We find that electron-phonon coupling leads to a sizable reduction in the indirect gap of MgSiN_2, which is indispensable in understanding the optoelectronic properties of this material. Taking the band gap renormalization into account, the band gap of MgSiN_2 determined by the quasiparticle GW0 calculations shows good agreement with recent experimental result. The predicted phonon-assisted indirect optical absorption spectra show that with increasing temperature the absorption onset undergoes a red-shift. Our work provides helpful insights to the nature of the band gap of MgSiN_2 and facilitates its application in ultraviolet optoelectronic devices.
What problem does this paper attempt to address?