Abstract:The manipulation of native atomic defects and their thermal excitations plays vital roles in the thermoelectric performance of Mg3Sb2-based materials. While native defects manipulation has been intensively studied in p-type Mg3Sb2, there exists interesting unsolved issue regarding the abnormal semiconducting electrical behavior in most of samples. In this work, high quality Mg3Sb2 and Mg3Bi2 (00l) films are fabricated by molecular beam epitaxy technique, while variable temperature angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy measurements are utilized for resolving the aforementioned issue. The thermal excitation of Mg interstitials (the electron donor) results in an obvious downshift of valence bands with rising temperature in both the p-type Mg3Sb2 and Mg3Bi2. Meanwhile, the interesting temperature-driven Lifshitz transition is discovered in the p-type Mg3Sb2, as indicated by the change of Fermi surface topology. Above the Lifshitz transition temperature, the Fermi level of p-type Mg3Sb2 will enter the bandgap, which leads to the abnormal semiconducting electrical behavior. This work discloses the excitation of native defects and temperature-driven Lifshitz transition, which are the main causes for the anomalies in electrical transport of p-type Mg3Sb2-based materials, and also provides valuable insights for further improving their thermoelectric performance.

Temperature-induced Band Gap Renormalization in Mg2Si and Mg2Sn

Lattice Strain and Band Overlap of the Thermoelectric Composite Mg2Si1−xSnx

Thermoelectric performance enhancement of Mg2Sn based solid solutions by band convergence and phonon scattering via Pb and Si/Ge substitution for Sn

Low electron scattering potentials in high performance Mg 2Si0.45Sn0.55 based thermoelectric solid solutions with band convergence

Mg Vacancy and Dislocation Strains As Strong Phonon Scatterers in Mg2Si1−xSbx Thermoelectric Materials

Roles of Interstitial Mg in Improving Thermoelectric Properties of Sb-doped Mg2Si0.4Sn0.6 Solid Solutions

Revealing the temperature-driven Lifshitz transition in p -type Mg3Sb2-based thermoelectric materials

First-principles studies of lattice dynamics and thermal properties of Mg 2 Si 1− x Sn x

Thermoelectric Properties of Sb-doped Mg2 Si0.59 Sn0.41 Solid Solutions

Thermoelectric properties of Sb-doped Mg2Si0.59Sn0.41solid solutions

High Figures Of Merit And Natural Nanostructures In Mg2si0.4sn0.6 Based Thermoelectric Materials

Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation

Maximized atomic disordering approach boost the thermoelectric performance of Mg2Sn through the self-compensation effect and steric effect

Variations of Thermoelectric Properties of Mg2.2si1-Ysny-0.013sb0.013 Materials with Different Si/Sn Ratios

Multiscale Defects as Strong Phonon Scatters to Enhance Thermoelectric Performance in Mg2Sn1-xSbx Solid Solutions

Effect of Sb Doping on the Thermoelectric Properties of Mg 2 Si 0.7 Sn 0.3 Solid Solutions

Band convergence and phonon engineering to optimize the thermoelectric performance of CaCd 2 Sb 2

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Simple Synthesis and Thermoelectric Properties of Mg2 + xSi0.5Sn0.5Sb0.075 Materials with Heterogeneous Microstructure

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Compromise between band structure and phonon scattering in efficient n-Mg3Sb2-Bi thermoelectrics