Giant Tunneling Electroresistance Arising From Reversible Partial Barrier Metallization In The Natio3/Batio3/Latio3 Ferroelectric Tunnel Junction

Wei Xiao,Lili Kang,Hua Hao,Yanhong Zhou,Lei Zhang,Xiaohong Zheng,Zhi Zeng

DOI: https://doi.org/10.1039/d1cp01767e

IF: 3.3

2021-01-01

Physical Chemistry Chemical Physics

Abstract:Tunneling electroresistance (TER) is the change in tunneling resistance induced by ferroelectric polarization reversal in ferroelectric tunnel junctions (FTJs), and how to achieve a giant TER has always been a central topic in the study of FTJs. In this work, by considering the NaTiO3/BaTiO3/LaTiO3 junction with asymmetric polar interfaces as an example, we propose a novel scheme to realize a giant TER based on the reversible partial metallization of ferroelectric barrier upon the switching of ferroelectric polarization. Density functional theory calculations indicate that high on-state and low off-state conductances are obtained and the TER ratio is as high as 3.20 x 10(8)% due to the reversible partial barrier metallization, which leads to a great difference in the effective tunneling barrier widths. The reversible partial barrier metallization, accompanied by the ferroelectric polarization reversal, is driven by the parallel or anti-parallel alignment of the depolarization electrical field of the ferroelectrical barrier and a strong built-in electrical field cooperatively contributed by the asymmetric polar interfaces and the difference in the work functions of the two leads. The findings suggest a feasible scheme for constructing promising high performance FTJ memory devices by combining both asymmetric polar interfaces and substantially different work functions.