Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Design and Research of TVS Devices Based on Silicon Carbide Material

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Transient Voltage Suppressor Based on Diode-Triggered Low-Voltage Silicon Controlled Rectifier

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Development of High-Voltage SiC Power Electronic Devices

Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes

Development and Prospect of SiC Power Devices in Power Grid

Novel Multifunctional Transient Voltage Suppressor Technology for Modular EOS/ESD Protection Circuit Designs

An evaluation of TVS devices for ESD protection

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Investigation of 1200 V SiC MOSFETs' Surge Reliability.

Experimental Study on Triggering Characteristics of a Surface Flashover Triggered Vacuum Switch

Review of Silicon Carbide Power Devices and Their Applications

Electro-Thermal Coupling Characteristics and Modeling of SiC MOSFET Modules under High Pulse Current Conditions

Research on Protection Performance of Surge Protective Devices against Electromagnetic Pulse

Spice Simulation and Experimental Study of Transmission Lines with TVSs Excited by EMP

Influence of SiC Power Electronic Devices on the Power System

SiC Power Devices for Microgrids

Transient Voltage Suppressor Diode Array Protection Circuits with Reducing Loading Effect under High-Power Microwave Pulse Injection

Development of SiC Superjunction MOSFET: A Review