Amorphous GaOx Thin Films Grown by MOCVD for Broadband Ultraviolet Absorption Application
Chuang Zhang,Song Qi,Jierui Xue,Jiahe Cao,Zhigao Xie,Yimin Liao,Yan Wang,Hanzhao Song,Andeng Qu,Guofeng Hu,Zengxia Mei,Weihua Tang,Chee‐keong Tan
DOI: https://doi.org/10.1002/admt.202401215
IF: 6.8
2024-11-30
Advanced Materials Technologies
Abstract:Amorphous gallium oxide (a‐GaOx) thin films are synthesized via MOCVD under reduced oxygen flow. Analysis reveals substantial nonstoichiometric amorphous GaOx content alongside Ga2O3, with an optical bandgap near 3.3 eV. Metal‐semiconductor‐metal photodetectors based on this material exhibit broadband UV sensitivity, effectively covering 254–360 nm, positioning a‐GaOx as a promising candidate for UV photodetectors. Gallium oxide (Ga2O3), with its wide bandgap of 4.3–5.4 eV and tunable properties, holds great potential for applications in power electronics, solar‐blind photodetectors (PDs), and transparent conductive oxides, particularly effective in the 230–280 nm range for solar‐blind detectors. In contrast, amorphous gallium oxide (a‐GaOx) is gaining attention for UV PDs and flexible X‐ray detectors due to its straightforward synthesis. However, its effective utilization requires a deeper understanding of its chemical, structural, and optical properties. In this study, a‐GaOx is synthesized using metal–organic chemical vapor deposition (MOCVD) at a reduced oxygen flow rate. X‐ray photoelectron spectroscopy revealed that Ga2O can constitute over 30% of the thin film at high trimethylgallium (TMGa) flux, coexisting with Ga2O3 and exhibiting an optical bandgap ≈3.3 eV. Notably, a metal‐semiconductor‐metal photodetector fabricated from this a‐GaOx thin film demonstrated potential as a novel broadband ultraviolet (BUV) absorption material, effectively covering the 254 to 360 nm range.
materials science, multidisciplinary