Detach vertical (Al,Ga)N nanowires to realize the flexible ultraviolet photodetector with high ultraviolet/visible reject ratio and detectivity

Min Zhou,Yukun Zhao,Wenxian Yang,Jianya Zhang,Min Jiang,Yuanyuan Wu,Ziwei Xu,Shulong Lu
DOI: https://doi.org/10.1002/ente.202200885
IF: 4.149
2022-10-12
Energy Technology
Abstract:Flexible ultraviolet (UV) photodetector can meet the growing demand and wide applications of next‐generation portable and light‐weight optoelectronic devices. In this work, we propose and fabricate a flexible UV photodetector based on (Al,Ga)N nanowires by numerical and experimental approaches successfully, which has the high UV/visible reject ratio (1.5 × 104) and detectivity (8× 1010 Jones). To accelerate the carrier transport and enhance the response, the top‐down‐top current pathway is demonstrated by introducing the interdigitated electrodes and graphene. The UV/visible reject ratio of the flexible photodetector can be enhanced over 40 times by removing epitaxial silicon substrate to eliminate the corresponding visible response, leading to an excellent detection selectivity. By numerical simulations, the electric‐field intensities of the nanowires are comparative in the unbending and bending states. After ‐120° bending, the photodetector performance remains quite stable. Under different bending states, the maximum variation of different response time can be kept within 0.15 s. According to the experimental data, the barrier height is essentially unchanged under different bending states, which should be a key factor contributing to the outstanding stability of the photodetector. This article is protected by copyright. All rights reserved.
energy & fuels
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