Ambipolar Photocarrier Doping and Transport in Monolayer WS₂ by Forming a Graphene/WS₂/Quantum Dots Heterostructure

Guanghui Cheng,Baikui Li,Chunyu Zhao,Zijing Jin,Kei May Lau,Jiannong Wang

DOI: https://doi.org/10.1109/led.2021.3051304

IF: 4.8157

2021-01-01

IEEE Electron Device Letters

Abstract:In this work, we demonstrated that ${p}$ -type and ${n}$ -type conduction could be induced in unintentionally doped pristine monolayer (ML) WS2 by forming a hybrid WS2/InGaN quantum dots (QDs) heterostructure, in which the ML-WS2 is partially covered by few-layer graphene. Under illumination, the photo-generated holes or electrons in the QDs were injected vertically into the ML-WS2 and then transported laterally therein. The polarity of the WS2 channel can be controlled by the bias applied to the graphene electrode. This work provides a potential approach to develop ambipolar devices of ML transition metal dichalcogenides through photocarrier doping.