Iridium nano-oxide as a neural electrode

李仁变,黄清南,朴宗哲,崔福斋
DOI: https://doi.org/10.3969/j.issn.1008-2395.2004.02.011
2004-01-01
Abstract:Iridium film with the thickness of 30 nm and 60 nm were formed on both Si wafer and commercially pure (CP) Ti by electron beam evaporation. The thin iridium film showed the identical charge injection capability with the bulk Ir. Swiss 3T3 fibroblasts culture on Ir and Ir oxide showed no cytotoxicity. Also, embryonic cortical neural cell culture on electrode indicated neurons adhered and survived by the formation of neurofilament.
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