Wafer dicing and random defect driven reticle design

Yi Ye,Jiaojiao Zhu,Zheng Shi
DOI: https://doi.org/10.13245/j.hust.140309
2014-01-01
Abstract:In order to cover the shortages in existing reticle design methods ,a reticle design method was proposed to consider both the yield loss caused by wafer dicing and the yield loss caused by ran-dom defect .During the stage of reticle floorplanning ,chips with higher yield loss rate caused by ran-dom defect had higher penalty in the objective function ;therefore ,through simulated annealing ,they were automatically placed at a proper position of the reticle to avoid yield loss caused by wafer dicing conflict .This mechanism balances the production volumes of chips .On the premise of ensuring re-quired production volumes ,it decreased the numbers of wafers required .Compared with the method minimizing the area of reticle and the method considering only wafer dicing ,the proposed method de-creases the numbers of the wafers by 15 .22% and 7 .14% ,respectively .
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