Real-time observation of bismuth silicon oxide crystal growth in silicon oxide-bismuth oxide system

Xiu-feng WANG,Chi XU,Hong-tao JIANG,Yuan-heng HAN
DOI: https://doi.org/10.3969/j.issn.1000-5811.2015.03.009
2015-01-01
Abstract:Real time observation and analysis of high temperature melt is great of significance for crystal growth and the analysis of its influencing factors .The paper using high tempera-ture thermal units and polarizing optical microscope observed the melt and cooling process of bismuth silicon systems in real time .In high temperature the bismuth oxide powder which in contact with quartz sand is first melting ,it shows that the heterogeneity particles at the con-tact point is the place to reaction start .Then bismuth oxide melt reacted with the quartz (sil-icon dioxide) crystal .In cooling process the surface of quartz crystal and the crucible wall grown bismuth silicate crystals .This means at the contact point of particle is easy to crystal grow .The molar ratio of bismuth oxide and silicon dioxide was 4:3 in the experiment ,not all of the quartz crystal melted at this moment .Comparative analysis of the system melt crystallization process of growing up in cooling process ,the average grow th rate of crystals of bismuth silicate is calculated 15 .38 μm/min .According to the energy spectrum analysis of scanning ,melt temperature and the enrichment of silicon element have important influenceon the crystal grow th rate .
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