Abstract:A novel technique named "the single-well energy representation" is developed for analyzing the valence band structures of strained single or multiple quantum well structurer. Analysis and optimization are performed for 1.55 mu m InGaAs/InGaAsP strained multiple quantum well lasers lattice matched to InP with 1.1 mu m barrier bandgap, and some significant results are obtained. The band offsets are functions of the strain instead of constants. A certain relation exists between the strain and the well width as well as the indium composition in the InGaAs well material. The strain changes the valence band structure and the density of states, and hence affects the properties of the lasers. The compressive strain results in higher peak gain and differential gain of the TE polarization. The minimum threshold current density exists, and the well number is optimized. When the compressive strain is beyond 0.5%, the optimum well number varies slowly, in particular, the minimum threshold current density varies very slightly, and it nearly maintains a constant. The optimum well number and the minimum threshold current density decrease with an increase in the cavity length. For an about 1000 mu m cavity length, the optimum well number is about 1 in the range of compressive strain from 0.4% to 3.0%. In this case the single quantum well laser has the lowest threshold current density.

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THE BEAM QUALITY FACTOR M2 OF SEMICONDUCTOR LASERS COULD BE LESS THAN 1

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Progress in New Laser Beam on Optical Beam Quality

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Study on the super-high quality laser beam

Analysis and optimization of 1.55 μm InGaAs/InGaAsP strained multiple quantum well lasers

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