Abstract:Single-frequency ultranarrow linewidth on-chip microlasers with a fast wavelength tunability play a game-changing role in a broad spectrum of applications ranging from coherent communication, light detection and ranging, to metrology and sensing. Design and fabrication of such light sources remain a challenge due to the difficulties in making a laser cavity that has an ultrahigh optical quality (Q) factor and supports only a single lasing frequency simultaneously. Here, we demonstrate a unique single-frequency ultranarrow linewidth lasing mechanism on an erbium ion-doped lithium niobate (LN) microdisk through simultaneous excitation of high-Q polygon modes at both pump and laser wavelengths. As the polygon modes are sparse within the optical gain bandwidth compared with the whispering gallery mode counterpart, while their Q factors (above 10 million) are even higher due to the significantly reduced scattering on their propagation paths, single-frequency lasing with a linewidth as narrow as 322 Hz is observed. The measured linewidth is three orders of magnitude narrower than the previous record in on-chip LN microlasers. Finally, enabled by the strong linear electro-optic effect of LN, real-time electro-optical tuning of the microlaser with a high tuning efficiency of similar to 50 pm/100 V is demonstrated.

Tunable, High Beam Quality and Narrow Linewidth Semiconductor Disk Laser

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Coherent mode-combined ultra-narrow-linewidth single-mode micro-disk laser

Widely Tunable Distributed Feedback Semiconductor Lasers with Constant Power and Narrow Linewidth

Narrow Linewidth Single-Mode Slotted Fabry–Pérot Laser Using Deep Etched Trenches

Tunable V-Cavity Semiconductor Laser And Modules

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

980Nm InGaAs/AlGaAs Quantum Well High Power Semiconductor Laser with Narrow Vertical Divergence Angle

990 Nm High-Power High-Beam-Quality DFB Laser with Narrow Linewidth Controlled by Gain-Coupled Effect

Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Narrow Line-Width Ytterbium-Doped Fiber Ring Laser Based on Saturated Absorber

High-power Single-Longitudinal-mode Double-Tapered Gain-Coupled Distributed Feedback Semiconductor Lasers Based on Periodic Anodes Defined by I-Line Lithography

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

High power widely tunable frequency-doubled 490 nm blue semiconductor disk laser

Narrow-Strip 670 Nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography

996 Nm High-Power Single-Longitudinal-mode Tapered Gain-Coupled Distributed Feedback Laser Diodes.

Kilowatt-Level High-Efficiency Narrow-Linewidth All-Fiber Tm3+-Doped Laser

Programmable Wide Band Wavelength Tuning External-Cavity Semiconductor Laser