Effect of Heat Treatment on the Growth of CuO Nanowires

XIE Lilin,ZHAO Hui,ZHANG Xiaona,WANG You,ZHANG Ze
DOI: https://doi.org/10.3969/j.issn.1000-6281.2016.05.004
2016-01-01
Abstract:In this paper, CuO nanowires were prepared by thermal oxidation method. The effect of temperature and cooling methods on the growth of CuO nanowires were studied through scanning electron microscopy and X?ray diffraction. A few CuO nanowires were obtained in the air cooling sample after heating at 600 ℃, while a large number of CuO nanowires were observed in sample cooling in furnace at 600℃. Besides, there were many nanowires in the air cooling sample after heating at 400℃. It could be concluded that the growth temperature of CuO nanowires was not higher than 400℃. CuO layer got growth when the temperature was higher than 400℃, and the growth of CuO nanowires mainly occurred at lower temperature. These results could be understood by the diffusion of Cu ion in the oxidation layer. The main diffusion ways of Cu ion are lattice diffusion and grain boundary diffusion, which correspond to the higher temperature and the lower temperature, respectively. Lattice diffusion would result in the growth of CuO layer while grain boundary diffusion would result in the growth of CuO nanowires.
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