The interfacial condition of SiCp/Al composites

Pei LIU,Aiqin WANG,Shiming HAO,Jingpei XIE
DOI: https://doi.org/10.3969/j.issn.1000-6281.2014.04.005
2014-01-01
Abstract:35% SiCp/2024Al composite materials were produced by vacuum hot pressing sintering process at 580 ℃. The interfacial condition of SiC/Al and alloy phase/Al were characterized by TEM, EDS and HREM. The interface types and combination mechanism of SiC/Al, alloy phase/Al before and after heat treatment were investigated. The results show that the SiC/Al interfaces are clear and smooth, and there are no reactant, defect and the phenomenon of particle dissolution. The interface types of SiCp/Al include amorphous layer interface and clean interface. There are no fixed or preferential crystallographic orientation relationships between SiC and Al, and the combination mechanism of them is the closely matching of atoms forming a half coherent interface. The alloy phases after vacuum hot pressing sintering process is mainly Al4 Cu9 , which form a incoherent interface with Al. After heat treatment, the phases of Al2 Cu are dispersed in the matrix, which keep a small mismatch degree half coherent interface with Al.
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