Abstract:Temperature-, excitation wavelength-, and excitation power-dependent photoluminescence (PL) spectroscopy have been utilized to investigate the orientation-modulated near band edge emission (NBE) and deep level emission (DLE) of ZnO single crystals (SCs). The near-band-edge emission of ZnO SC with orientation exhibits strong and sharp emission intensity with suppressed deep level defects (mostly caused by oxygen vacancies Vo). Furthermore, Raman analysis reveals that orientation has dominant E2 (high) and E2 (low) modes, indicating that this direction has better crystallinity. At low temperature, the neutral donor-to-bound exciton (DoX) transition dominates, regardless of the orientation, according to the temperature-dependent PL spectra. Moreover, free-exciton (FX) transition emerges at higher temperatures in all orientations. The PL intensity dependence on the excitation power has been described in terms of power-law (I~Lα). Our results demonstrate that the α for , , and is (1.148), (1.180), and (1.184) respectively. In short, the comprehensive PL analysis suggests that DoX transitions are dominant in the NBE region, whereas oxygen vacancies (Vo) are the dominant deep levels in ZnO. In addition, the orientation contains fewer Vo-related defects with intense excitonic emission in the near band edge region than other counterparts, even at high temperature (~543 K). These results indicate that growth direction is favorable for fabricating ZnO-based highly efficient optoelectronic devices.

Investigation on Near Band Edge UV Luminescence of ZnO Thin Films

Surface Topography and Optical Properties of Al-doped ZnO Thin Films by Sol-gel Process

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Effect of Annealing Temperature and CuO on Microstructure and Optical Band Gap of CuxZn1−xO Thin Films

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Temperature Dependent Photoluminescence of ZnO Single Crystals

Localized Exciton Emission from ZnO Nanocrystalline Films

Correlation Between Structure and Photoluminescence of C-Axis Oriented Nanocrystalline ZnO Films and Evolution of Photo-Generated Excitons

ZnO:Eu thin-films: Sol–gel derivation and strong photoluminescence from 5D0→7F0 transition of Eu3+ ions

Photoluminescence Spectra of Nano-Structured ZnO Thin Films

Surface effects on photoluminescence of single ZnO nanowires

Orientation-Mediated Luminescence Enhancement and Spin-Orbit Coupling in ZnO Single Crystals

Temperature-Dependent Photoluminescence of Nanostructured ZnO

Excitation-intensity and Temperature Dependences of Photoluminescence in ZnMgO Film

Influence of Annealing on Microstructure and Photoluminescence Properties of Al-Doped ZnO Films

Investigation on the Structural and Optical Properties of ZnO Thin Films Prepared by Sol-Gel Method

Photoluminescence of Undoped and B-doped ZnO in Silicate Glasses

Origins of Green Band Emission in High-Temperature Annealed N-Doped Zno

Effect of Annealing on Photoluminescence of ZnO: Al Thin Films Prepared by Sol-Gel Method

Temperature dependent exciton photoluminescence of bulk ZnO

Structure and Photoluminescence of C-Axis Oriented Nnanocrystalline ZnO Films Synthesized by Plasma Assisted Pulsed Laser Deposition