Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Numerical Simulation on Statistical Models of Carrier Mobility in Si

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

A Unified Mobility Model for Cryogenic Bulk Silicon Simulations in Wide Doping Range

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Analytic Solutions of Drift-Diffusion Equations and Mobility of Organic Semiconductors

Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering

Generalized Transport-Band Field-Effect Mobility in Disordered Organic and Inorganic Semiconductors

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Stochastic Transport Processes of Carriers in Amorphous-Semiconductor Superlattices

Study of carrier transport through GexSi1−x/Si heterojunctions by using 2D Monte Carlo simulation method

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

A Universal Electron Mobility Model of Strained Si MOSFETs Based on Variational Wave Functions

Advances in Inversion Channel Mobility Model for 4H-SiC MOS Devices

Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors