Microstructure and thermoelectric properties of n type nanocomposite Bi2(Te0.9Se0.1)3/(SiC)y thermoelectric materials

Jie TIAN,Xin ZHANG,Ziqun ZHOU,Hongliang LIU,Yanan FU,Jiuxing ZHANG
DOI: https://doi.org/10.3969/j.issn.1001-9731.2018.06.031
2018-01-01
Abstract:Thermoelectric (TE)materials have received extensive attention for their potential applications in con-verting various kinds of heat energy into electricity.Bi2Te3 and its alloys are known to be the best TE materials at near room temperature.Bi2Te3 materials own a large power factor and a low thermal conductivity.It is found that the ZT value could be significantly improved by nanocomposite.And one effective way to increase the TE properties is to reduce the thermal conductivity by incorporating nano-sized particles into the matrix.The intro-duction of the second phase by nano composite can effectively improve the thermoelectric properties of the mate-rials.It is expected that the dispersion of SiC nano-particles in Bi2Te3 could reduce the thermal conductivity but not significantly decrease the electrical conductivity.Bi2Te3 ingots have poor mechanical properties and mechani-cal alloying (MA)combine the powder sintering process is usually used to improve the mechanical properties of Bi2Te3-based alloys.N-type nanocomposite Bi2(Te0.9Se0.1)3/(SiC)y(0≤y≤0.02) were fabricated by MA com-bined with spark plasma sintering (SPS) method using bismuth powder,tellurium powder,selenium powder and nano SiC as raw materials.The effects of nano SiC on phase components,microstructure,and the thermoe-lectric properties were systematically investigated.The experimental results show that the nanosized SiC parti-cles are dispersed in the grain boundary of Bi2(Te0.9Se0.1)3 matrix,the nano composite structure of which can significantly reduce the lattice thermal conductivity and improve the performance of the thermoelectric material. The pattern of electrical transport is n conduction.Meanwhile,with increasing amount of SiC doping,the resis-tivity and Seebeck coefficient were enhanced,and the samples still have good electrical properties at near the room temperature.Nano SiC can enhance phonon scattering and significantly reduce the thermal conductivity due to its diffuse distribution in grain boundary,which leads to a higher ZT than that of the non-doped samples. The dimensionless figure of merit ZT was improved and reaches maximum value of 0.73 at 323 K for the Bi2 (Te0.9Se0.1)3/(SiC)0.01 sample.
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