Abstract:Polycrystalline film photodetectors often suffer from several drawbacks, such as uncontrollable defect species, grain boundary scattering, and surface oxygen trapping/detrapping, hindering their practical applications in high-performance UV photodetection. In this work, we induce an acceptor-type zinc vacancy (V-Zn ) defect in zero-dimensional ZnO nanocrystals by a dual thermal annealing process, which has been closely examined by a defect-sensitive electron paramagnetic resonance technique. The optimization of annealing parameters can well tune the V-Zn concentration and induce a considerable self-powered behavior, which is believed to result from ionized acceptor enhanced charge separation. On the other aspect, the capping of metallic Zn can lead to the formation of abundant interface conducting channels for the highly efficient charge transport and extraction. The optimized responsivity is enhanced from 5.3 x 10(-3) to 15.3 A W-1, and the average rise and decay times remain at 36.6 and 101.8 ms, respectively. Conductive atomic force microscopy confirms a uniform photocurrent distribution in the annealed polycrystalline films, suggesting the significance of synergies of lattice defects and grain boundary conductive channels. This study unambiguously demonstrates a new route to engineer the photodetection in nanocrystalline oxides, providing a promising prospect for future low-cost, low-power-consumption micro-/nano-optoelectronic devices.

Effects of defect-control on photoelectric response and recovery properties of ZnO nanorod arrays

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Performance Improvement of Ultraviolet Sensor of ZnO Nanorod Arrays

Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

Concurrent Improvement of Photocarrier Separation and Extraction in ZnO Nanocrystal Ultraviolet Photodetectors

Enhanced Field Emission from Zno Nanorods Via Thermal Annealing in Oxygen

Full-color Photoluminescence of ZnO Nanorod Arrays Based on Annealing Processes

Effect of Growth Time and Annealing on the Structural Defect Concentration of Hydrothermally Grown Zno Nanowires

Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Effects of Annealing Temperature on Excitonic Emissions from Na-Implanted Zno Nanorods

Optical and Electrical Performance of HfO<SUB>2</SUB> Coated ZnO Nanorod Arrays

Effect of Annealing on Lattice Strain and Near-Band-edge Emission of ZnO Nanorods

Controlling the hydrothermal growth and the properties of ZnO nanorod arrays by pre-treating the seed layer

Influence of Defects on the Photocatalytic Activity of ZnO

The Effect of Postannealing on the Electrical Properties of Well-Aligned N-Zno Nanorods/p-Si Heterojunction

Near Band Edge Photoluminescence Of Zno Nanowires: Optimization Via Surface Engineering

Effects of Schottky Contact and Ohmic Contact on the Emission Properties of Metal-Covered Zno Nanorod Arrays

Defect Emissions in ZnO Nanostructures

Effect of the defect on photoluminescence property of Al-coated ZnO nanostructures

Inverse dynamic defect annealing in ZnO

Identification and Control of Native Defects in N-doped ZnO Microrods