Inductively Coupled Plasma Atomic Emission Spectrometric Determination of Boron in Polycrystalline Silicon Based on the Formation of Potassium Fluoborate

HUANG Yan-fang,LI He,GUO Chang-juan,CHEN Hong-yu,ZHONG Meng-ting
DOI: https://doi.org/10.3969/j.issn.1000-7571.2012.08.010
2012-01-01
Abstract:In order to rapidly and simply determine the content of trace boron in polycrystalline silicon by inductively coupled plasma atomic emission spectrometry(ICP-AES) and reduce the volatilization loss of boron during digestion procedure,a novel method was proposed in this study.The sample was decomposed with hydrofluoric acid and hydrogen nitrate.Then,KF was added to make HBF4 formed from boron changing to a very stable compound KBF4.Finally,the content of boron in testing solution was determined by ICP-AES.The effect of KF dosage,evaporation time and temperature on the determination was discussed.The experimental parameters were optimized.The proposed method was applied to the determination of boron in polycrystalline silicon.The detection limit was 2.6 pg/mL,the relative standard deviation(RSD) was 3.6 %-6.9 %,and the recoveries were 98 %-102 %.
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