Abstract:At present, wire sawing technology is the primary slicing method used for certain brittle materials, including monocrystalline silicon, sapphire, and silicon carbide. The surface quality of the sawn wafers significantly impacts subsequent machining processes, such as grinding and polishing. A theoretical model was developed to predict the amount of material removed per unit length of wire during the slicing of circular workpieces by a wire saw with reciprocating and rocking functions. Experiments were conducted during this study in which crystal ingots were sliced using a multi-wire saw, and the amount of material removed per unit length of wire was determined at different cutting positions on the workpiece cross-section. The surface roughness of each crystal wafer was measured systematically. The experimental results revealed that the surface roughness values measured at different points at the same y -coordinate position on a single wafer were approximately equal. However, the surface roughness was greatest on both the initial and final cutting edges and gradually decreased toward the wafer center. The surface roughness was also greatest for the wafer cut nearest to the new wire side, though it gradually decreased for wafers cut nearer to the center of the workpiece and remained relatively consistent from the middle wafer to the wafer cut nearest to the used wire side. The results also indicated that both the material removed per unit length of wire and the surface roughness of the wafer decreased with increases in the wire speed. The relationship between the material removed per unit length of wire and the surface roughness was approximately linear. When the material removed per unit length of wire was set to 0.00333 mm 3 /m, the average wafer surface roughness was 0.45 μm.

Experimental study of Nd∶YAG crystalline high-precision cutting

Controllable Diamond Cutting of Structured Surfaces with Subnanometric Height Features on Silicon

Design of KDP crystal precision cutting machine and analysis of influence factors on its cutting surface quality

Experiment study on electroplated diamond wire saw slicing single-crystal silicon

Experimental Investigation on the Surface Formation Mechanism of NdFeB during Diamond Wire Sawing

Experimental Parametric Investigation of Nanosecond Laser-Induced Surface Graphitization of Nano-Crystalline Diamond

Effects of processing parameters and grinding direction on the material removal mechanism of (100) surface single crystal diamond in self-rotating mechanical grinding

Analysis of Mechanical Property of Crystal KDP and Simulation of Ultra-Precision Cutting Process in the Ductile Mode

Influence of the grain size of CVD diamond on the thermal conductivity, material removal depth and surface roughness in nanosecond laser machining

Investigation on nano-grinding process of GaN using molecular dynamics simulation: Nano-grinding parameters effect

Influence of diamond wire saw slicing parameters on (010) lattice plane beta-gallium oxide single crystal wafer

EXPERIMENTAL INVESTIGATION OF THE SURFACE TOPOGRAPHY IN TERMS OF PROCESS PARAMETERS DURING PICOSECOND LASER MACHINING OF POLYCRYSTALLINE DIAMOND

Experimental and Theoretical Investigations on Diamond Wire Sawing for a NdFeB Magnet

Experimental Research on Cutting Forces in Ultra-precision Machining of KDP Crystals

Material removal and surface damage mechanisms in micro drilling of Nd:YAG material

Novel surface characteristics observed during grinding of polycrystalline diamond

Effect of Incident Angle on Laser Processing of a Small Vitrified CBN Grinding Wheel

Experimental study regarding the surface roughness of circular crystal wafers sliced by a multi-wire saw with reciprocating and rocking functions

Fabrication of PCD Skiving Cutter by UV Nanosecond Laser

Research on Influence of the Material Anisotropy to the Surface Quality During SPDT Machining of Crystal KDP

Grain Refinement-Induced Machined Surface Quality Promotion in Ultrasonic Vibration-Assisted Polycrystalline Diamond Cutting of Polycrystalline Cu