Abstract:Defects in MoS2 defects are tailored via pressure‐controlled CVD to achieve diverse functionalities. Low‐pressure CVD growth yields sulfur‐vacancy rich MoS2, enhancing photoresponsivity, FET characteristics and electrocatalytic activity for HER, while atmospheric pressure CVD creates MoS2 with oxygen‐passivated defects leading to superior photoluminescence. This work demonstrates a single‐step CVD approach for defect engineering in MoS2, with potential applicability to other monolayer 2D materials. Molybdenum disulfide (MoS2), a two‐dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS2, remains a notable challenge. Here, an in‐situ defect engineering approach for monolayer MoS2 using a pressure‐dependent chemical vapor deposition (CVD) process is presented. Monolayer MoS2 grown in a low pressure CVD conditions (LP‐MoS2) produces sulfur vacancy (Vs) induced defect‐rich crystals primarily attributed to the oxygen‐deficient growth conditions. Conversely, atmospheric pressure CVD‐grown MoS2 (AP‐MoS2) passivates these defects with oxygen from ambient conditions. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP‐MoS2 shows a drastically enhanced photoluminescence, which is significantly quenched in LP‐MoS2 attributed to in‐gap electron donor states induced by the Vs defects. However, the n‐doping induced in LP‐MoS2 generates enhanced photoresponsivity and detectivity in fabricated photodetectors compared to the AP‐MoS2‐based devices. Defect‐rich LP‐MoS2 outperforms AP‐MoS2 as channel layers of field‐effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single‐step CVD approach for in situ defect engineering in monolayer MoS2 and presents a pathway to control defects in other monolayer 2D materials.

Progress in Mechanical Properties and Defect Engineering of Single Layer Molybdenum Disulfide

Magnetism in Molybdenum Disulphide Monolayer with Sulfur Substituted by 3d Transition Metals

Exploring atomic defects in molybdenum disulphide monolayers

Defect Engineering of Two-dimensional Molybdenum Disulfide

Greatly Enhanced Optical Absorption of A Defective Mos2 Monolayer Through Oxygen Passivation

Tuning Electronic Structure of Single Layer MoS2 Through Defect and Interface Engineering

Delamination of MoS2/SiO2 Interfaces under Nanoindentation.

Defect evolution behaviors from single sulfur point vacancies to line vacancies in monolayer molybdenum disulfide

Intrinsic defect engineering of CVD grown monolayer MoS$_2$ for tuneable functional nanodevices

Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Electronic Properties of Germanene on Pristine and Defective MoS2 : A First-Principles Study

Modification of Thermal Transport in Few-Layer MoS2 by Atomic-Level Defect Engineering.

Chemical environment dependent Stabilities, electronic properties and diffusions behaviors of intrinsic point defects in novel Two-Dimensional MoSi2N4 monolayer

Line Defects in Molybdenum Disulfide Layers

Electronic Properties of Defective MoS$_{2}$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Oxygen Driven Defect Engineering of Monolayer MoS2 for Tunable Electronic, Optoelectronic, and Electrochemical Devices

Structural Defects, Mechanical Behaviors, and Properties of Two-Dimensional Materials

Native Point Defects of Semiconducting Layered Bi2O2Se

Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation