Abstract:High-k oxide materials for metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor (MOS) structure on SiC have been explored to enhance SiC-based device performance. In our experiments, the MOS capacitors with a high-k barium titanate (BaTiO 3 ) insulating layer were fabricated using the aerosol deposition (AD) method, and post-deposition annealed in O 2 atmospheres. We examined the effects of post-deposition annealing on the BaTiO 3 films and their impact on the surface and electrical characteristics of MOS capacitors. The crystallinity and surface morphologies of the BaTiO 3 films were analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and atomic force microscopy. We conducted the electrical analysis through current–voltage and capacitance–voltage ( C – V ) measurements. The post-deposition annealing process effectively reduced the gate leakage current of BaTiO 3 /4H-SiC and elevated the rectification ratio from 9.12 × 10 8 to 1.61 × 10 9 . C – V characteristics were measured at 1 MHz to investigate the oxide defect charges inside the MOS capacitors. Near-interface trap density ( ) decreased from 9.10 × 10 11 to 5.53 × 10 11 cm −2 due to post-annealing, which diminished flat band voltage hysteresis. Fixed oxide charge density ( ) also diminished from 4.00 × 10 11 to 3.58 × 10 11 cm −2 , and the oxygen vacancies were compensated by the oxygen atoms introduced from the O 2 during the post-deposition annealing. Our findings suggest that the post-deposition annealed process significantly influences surface and electrical properties during BaTiO 3 thin film deposition using AD.

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Effects of pH on Preparation and Properties of CaTi<sub>2</sub>O<sub>4</sub>(OH)<sub>2</sub> by Hydrothermal Method

AFM Study on the Surface Morphologies of TiN Films Prepared by Magnetron Sputtering and Al2O3 Films Prepared by Atomic Layer Deposition

Study on the Crystallinity and Oxidation States of Nanoporous Anodized Tin Oxide Films Regulated by Annealing Treatment for Supercapacitor Application

Effects of Ph on Preparation and Properties of CaTi<sub>2</sub>O<sub>4</sub>(OH)<sub>2</sub> by Hydrothermal Method

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Ultra-thin anodized aluminium dielectric films: the effect of citric acid concentration and low-voltage electronic applications

Influence of Dipping Conditions on the Rate of Capacitance Withdrawing of Solid Electrolytic Aluminum Capacitor Using PEDOT As Conducing Cathodal Layer

Influence of Electrolyte Temperature on Morphology and Properties of Composite Anodic Film on Titanium Alloy Ti-10V-2Fe-3Al

Preparation of Nb2O5-Al2O3 Composite Anodic Oxide Film for an Aluminum Electrolytic Capacitor by Electrodeposition-Annealing and Anodization

High-Performance TiO 2 /ZrO 2 /TiO 2 Thin Film Capacitor by Plasma-Assisted Atomic Layer Annealing

Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method

Capacitor performance of TiO2/C composite electrode

Effect of Etch Conditions on Expanding Surface Corrosion of Anodic Foil for Aluminum Electrolytic Capacitors

The Effect of Deposition Temperature on TiN Thin Films for the Electrode Layer of 3D Capacitors Prepared by Atomic Layer Deposition

Influences of pulse frequency on formation and properties of composite anodic oxide films on Ti-10V-2Fe-3Al alloy

Fabrication and Electrical Properties of Titanium Oxide by Thermally Oxidizing Titanium on Silicon