Fabrication and Electrical Properties of Titanium Oxide by Thermally Oxidizing Titanium on Silicon

朱晖文,赵柏儒,刘晓彦,康晋锋,韩汝琦
DOI: https://doi.org/10.3969/j.issn.1674-4926.2002.04.001
2002-01-01
Abstract:Polycrystalline titanium oxide films are fabricated on silicon by thermally oxidizing titanium.The current-voltage and capacitance-voltage characteristics of the Ag/TiOx/Si/Ag capacitors are measured.The thickness of the titanium oxide films arranges from 150nm to 250nm,and their dielectric constants are within 40~87.As the oxidation time is shortened,the fixed charges of the titanium oxide films become less and the leakage current characteristics become better.
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