Abstract:Capacitor structures utilized in modern dynamic random access memory (DRAM) cells require the conformal growth of high-k films on electrode materials. In this context, the atomic layer deposition (ALD) of rutile-phase TiO2 on nearly lattice-matched substrates such as RuO2 has been extensively explored. It is typically desired to grow such insulating films at high temperatures to ensure low defect concentrations and high crystallinity. However, with increasing growth temperature, it is also crucial to consider the aggravated effect of interface reactions that could potentially hinder final device performance. Here, we report the high-temperature ALD growth of TiO2 on RuO2 substrates using the heteroleptic precursor trimethoxy(pentamethylcyclopentadienyl)titanium ((CpMe5)Ti(OMe)3) and O3. High-quality, rutile-phase TiO2 films with large dielectric constants of ∼100 could be grown at temperatures exceeding 300 °C. When the growth temperature reaches 330 °C, we find that an anomalous RuO2 reduction reaction occurs due to interactions between the substrate and Ti precursor. The reduced Ru is transformed into volatile RuO4 during the subsequent O3 injection steps, resulting in partial etching of the substrate. Simple RuO2/TiO2/RuO2 capacitor devices fabricated from optimized films demonstrate excellent dielectric performance with an equivalent oxide thickness (EOT) of 0.5 nm at leakage current densities of less than 10–7 A/cm2. A further reduction of EOT to 0.4 nm could be achieved by implementing a single cycle of Al doping to the TiO2 films, surpassing the benchmark values proposed for next-generation DRAM capacitors by a safe margin. Our findings clearly showcase the benefits of high-temperature ALD in the semiconductor technology, as well as providing guidelines for the interpretation of the convoluted interface reactions tied to its implementation.

High-Performance TiO 2 /ZrO 2 /TiO 2 Thin Film Capacitor by Plasma-Assisted Atomic Layer Annealing

Plasma processing for crystallization and densification of atomic layer deposition BaTiO3 thin films

AFM Study on the Surface Morphologies of TiN Films Prepared by Magnetron Sputtering and Al2O3 Films Prepared by Atomic Layer Deposition

Fabrication of Electrospun Porous TiO2 Dielectric Film in a Ti–TiO2–Si Heterostructure for Metal–Insulator–Semiconductor Capacitors

High-Temperature Atomic Layer Deposition of Rutile TiO 2 Films on RuO 2 Substrates: Interfacial Reactions and Dielectric Performance

Ceramic dielectric film capacitors fabricated on aluminum foils by chemical solution deposition

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO 2 Antiferroelectric Films for Energy Storage Capacitors

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO2 Antiferroelectric Films for Energy Storage Capacitors

Amorphous/Crystalline Engineering of BaTiO 3 -Based Thin Films for Energy-Storage Capacitors

Antiferroelectric titanium-doped zirconia thin films deposited via HiPIMS for highly efficient electrocaloric applications

Structural and Morphologic Evolution of Pt/Ba0.7sr0.3tio3/Pt Capacitors with Annealing Processes

Electrical Characteristics of SrTiO3/Al2O3 Laminated Film Capacitors

Structure and Electrical Properties of Sputtered TiO2/ZrO2 Bilayer Composite Dielectrics Upon Annealing in Nitrogen

Formation and Property of Al2O3-TiO2 Composite Anodic Oxide Film on DC-Etched Al Foil for Al Electrolytic Capacitors

PLZT Film Capacitors for Power Electronics and Energy Storage Applications

Study on Fabrication and Properties of BaO-Nd_2O_3-Sm_2O_3-TiO_2(BNTS) Thin Films Capacitor

I-V and C-V Properties of TiO 2 Thin Film by Pulsed-Laser Reactive Deposition

Ultrahigh-Efficiency Superior Energy Storage in Lead-Free Films with a Simple Composition.

Self-enhanced Electrical Performance and Less Defective Electrode/film Structure for Al2O3 Capacitor Via Interfacial Anodic Oxidation

Effect of TiO2 Nanostructures on Specific Capacitance of Al2O3–TiO2 Composite Film on Etched Aluminum Foil Formed by the Sol–gel and Anodizing

Formation and Capacitance Properties of Ti-Al Composite Oxide Film on Aluminum