Abstract:For recently emerging ferroelectric resistive memories, for example, ferroelectric diodes, retention is one of the most critical concerns and understanding its underlying physics is of importance. It is proposed that in a ferroelectric diode, the depolarization field (Edp)-driven polarization relaxation can modify the conduction against time, because the metal/ferroelectric Schottky barrier is greatly influenced by the polarization. Based on this effect, a theoretical model combining both the Edp-driven polarization relaxation kinetics and polarization-controlled Schottky emission is established. Simultaneously, we experimentally investigate the retention characteristics of the metal/BiFeO3 (BFO)/La0.7Sr0.3MnO3 (LSMO) ferroelectric diodes with various BFO thicknesses and top electrodes in order to verify this model. It is revealed that all the samples exhibit switchable diodelike resistive switching behaviors. The measured current-time [I(t)-t] characteristics show that the current in the low-resistance state decreases with time, indicating resistance relaxation. Moreover, the resistance relaxation becomes faster as the BFO thickness decreases from 40 to 10 nm and as the top electrode changes from Ag to Au and to Co. Using appropriate parameters, all the I (t)-t characteristics and their dependences on the BFO thickness and the top electrode's screening ability can be well described by the proposed retention model, in which the key role of the Edp is demonstrated. It is, therefore, deduced that the retention loss in a ferroelectric diode is mainly caused by the Edp-driven polarization relaxation and its effects on the Schottky emission. In addition to these fundamental insights, our study also provides suggestions for the technical aspects, such as improving the retention properties and nondestructively monitoring the polarization over time.

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