Abstract:ZnO thin film transistor with high-k NbLaO/SiO2 bilayer gate dielectric was fabricated by sputtering, and the temperature dependence of the electrical properties of the device was investigated in the temperature range of 293-353K for clarifying thermally activated carrier generation and carrier transport mechanisms in the conducting channel. With the increase in the temperature, the transfer curve shifts toward the negative gate voltage direction with a negative shift of the threshold voltage, an increase in the off-state current and the subthreshold slope, and a significant increase in carrier mobility. The decrease in the threshold voltage is originated from the formation of oxygen vacancy and the release of free electrons in the ZnO channel, and the formation energy can be estimated to be approximately 0.3eV. In both subthreshold and above-threshold regimes, the temperature dependence of the drain current shows Arrhenius-type dependence, and the activation energy is around 0.94eV for a gate voltage of 2V, reducing with the increase in the gate voltage. The temperature dependence of the ZnO film resistance also exhibits an Arrhenius-type behavior, indicating that the thermal activation conduction process is the dominant conduction mechanism in the ZnO film. Two types of thermal activation conduction processes are observed in the 303-373K temperature range. This is explained in terms of the existence of two types of deep donors that are consecutively excited to the conduction band as the temperature increases.

Temperature Dependence of the Electrical Characteristics of ZnO Thin Film Transistors

Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric

Effect of Annealing Temperature on the Electrical Properties of ZnO Thin-Film Transistors

Effects of Growth Temperature and Annealing on Properties of Zn3sn2o7 Thin Films and Application in Tfts

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

P‐1.2: Photoluminescence and Electrical Properties Study of ITO‐stabilized ZnO Thin‐Film Transistors with Different Annealing Temperatures

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Effects of Substrate Temperature on ZnO-TFT Based on Bi1.5 Zn1.0 Nb1.5O7 Insulating Layer

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

Effect of Annealing Temperature on Electrical Properties of ZnO-TFT

Fabrication And Characteristics Of Zno-Based Thin Film Transistors

P‐1.11: High‐mobility ZnO thin‐film transistors with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer dielectric

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Effects of Substrate Temperature on Performance of Calcium-Doped Zinc Oxide Tfts

The Influence of Channel Layer Thickness on the Electrical Properties of Zno Tfts

High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate

P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C