Abstract:Thin HfTiO gate dielectric is deposited by reactive co-sputtering method followed by wet or dry N2 anneal. The effects of Ti content on the performance of HfTiO gate dielectric are investigated by using different sputtering powers for the Ti target. Experimental results indicate that as the Ti content increases, the dielectric constant (κ) can increase up to 40 for a Ti content of 28%. However, when the Ti content is too high, the interface properties and gate leakage properties are deteriorated. On the contrary, results show that owing to the hydrolyzable property of GeOx, the wet-N2 anneal can greatly suppress the growth of unstable low-κ GeOx interlayer, resulting in lower interface-state density and gate leakage current, in addition to larger κ value. In this study, when the sputtering power of the Ti target is 80W together with a 25-W power for the Hf target and a post-deposition anneal (PDA) in wet-N2 ambient at 500°C for 300s, excellent device performance is achieved: equivalent oxide thickness of 0.72nm, equivalent dielectric constant of 39, interface-state density of 6.5×1011eV−1cm−2 and gate leakage current of 5.7×10−4A/cm2 at Vg=1V. Therefore, in order to obtain high-quality HfTiO gate dielectric for small-scaled Ge MOS devices, not only should the Ti content be optimized, the PDA should also be done in a wet-N2 ambient.

Improved Interfacial Properties of Ge MOS Capacitor by Treating Passivation Layer with NH3-Plasma

Investigation on Interfacial and Electrical Properties of Ge Mos Capacitor with Different Nh3-Plasma Treatment Procedure

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

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Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

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Improved Interfacial Properties of Ge Mos Capacitor with High-K Dielectric by Using Taon/Geon Dual Interlayer

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Improved Interfacial And Electrical Properties Of Ge Mos Capacitor With Zron/Taon Multilayer Composite Gate Dielectric By Using Fluorinated Si Passivation Layer

Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation

Improved Reliability of Ge MOS Capacitor with HfTiON High-K Dielelctric by Using Ge Surface Pretreatment in Wet NO

Improved Interfacial and Electrical Properties of Hflaon Gate Dielectric Ge Mos Capacitor by Nbon/Si Dual Passivation Layer and Fluorine Incorporation

Improved Interface Properties of Ge Metal-Oxide-Semiconductor Capacitor with Tatio Gate Dielectric by Using in Situ Taon Passivation Interlayer

Improved Interfacial and Electrical Properties of Ge MOS Devices with ZrON/GeON Dual Passivation Layer

High-K Gate Dielectric Gaas Mos Device with Laon As Interlayer and Nh3-Plasma Surface Pretreatment

Comparative Investigation on NH3-plasma Treating Different Surfaces of Stack-Gate Dielectric Ge MOS Capacitors

N 2 -Plasma-treated Ga 2 O 3 (gd 2 O 3 ) As Interface Passivation Layer for Ge MOS Capacitor with HfTiON Gate Dielectric

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation