Abstract:We investigated the effect of nitrogen-hydrogen (NH) mixed plasma pretreatment of 4H-SiC surfaces on SiC surface properties, SiO2/SiC interface quality, and the reliability and voltage stability of metal-oxide-semiconductor (MOS) capacitors. The NH plasma pretreatment decreased the incomplete oxide and contaminants on the SiC surface and reduced the density of SiO2/SiC interface traps. Compared with the untreated sample, the dielectric insulating characteristics and reliability of samples pretreated by NH plasma were improved. We also demonstrated that the shift/hysteresis of the flat band voltage (Vfb) and the midgap voltage (Vmg) induced by bias temperature stress for SiC MOS capacitors after NH plasma pretreatment was significantly decreased. Furthermore, the mechanisms of NH plasma pretreatment to improve interface properties and device performances were determined by combining secondary ion mass spectrometry (SIMS) measurements, X-ray photoelectron spectroscopy (XPS), and first-principles calculations. The result indicates that the excessive oxidation at the SiO2/SiC interface was limited due to the reduction in the diffusion of oxygen atoms into SiC caused by the surface Si-H and Si-N; NH plasma pretreatment suppressed the generation of interfacial traps by reducing surface pollutants and passivating surface defects, and some N atoms introduced into the SiO2/SiC interface effectively passivated the interfacial electroactive traps.

Improved Interfacial Properties of GaAs MOS Capacitor with NH3-plasma-treated ZnON As Interfacial Passivation Layer

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Metal Gate-Hfo2 Metal-Oxide-Semiconductor Capacitors on N-Gaas Substrate with Silicon/Germanium Interfacial Passivation Layers

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Improvement of Atomic-Layer-Deposited Al2o3/Gaas Interface Quality Through A Novel Sulfuration Method

Chemical and electrical characterization of AL2O 3/gaas interface improved by NH3 plasma pretreatment

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Improved Characteristics of Gasb Mos Capacitors by Ozone Post Deposition Treatment

Improved Interface Properties Of Gan Metal-Oxide-Semiconductor Device With Non-Polar Plane And Aln Passivation Layer

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Impact of Nitrogen Plasma Passivation on the Interface of Germanium Mos Capacitor

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions

Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Gate Dielectrics

Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors