Abstract:This study focuses on the captivating interplay between the ferromagnetic Fe3GeTe2 and the piezoelectric α‐In2Se3, both 2D van der Waals (vdW) materials. Strained heterojunctions exhibit several compelling transformations: increased domain density, reduced Curie temperature, and emergent magnetostrictive ferromagnetic domains. Using α‐In2Se3 is a versatile approach to strain‐tune vdW materials, including graphite and Te based vdW chalcogenides. The van der Waals interaction enables atomically thin layers of exfoliated 2D materials to be interfaced in heterostructures with relaxed epitaxy conditions, however, the ability to exfoliate and freely stack layers without any strain or structural modification is by no means ubiquitous. In this work, the piezoelectricity of the exfoliated van der Waals piezoelectric α‐In2Se3 is utilized to modify the magnetic properties of exfoliated Fe3GeTe2, a van der Waals ferromagnet, resulting in increased domain wall density, reductions in the transition temperature ranging from 5 to 20 K, and an increase in the magnetic coercivity. Structural modifications at the atomic level are corroborated by a comparison to a graphite/α‐In2Se3 heterostructure, for which a decrease in the Tuinstra‐Koenig ratio is found. Magnetostrictive ferromagnetic domains are also observed, which may contribute to the enhanced magnetic coercivity. Density functional theory calculations and atomistic spin dynamic simulations show that the Fe3GeTe2 layer is compressively strained by 0.4%, reducing the exchange stiffness and magnetic anisotropy. The incorporation of α‐In2Se3 may be a general strategy to electrostatically strain interfaces within the paradigm of hexagonal boron nitride‐encapsulated heterostructures, for which the atomic flatness is both an intrinsic property and paramount requirement for 2D van der Waals heterojunctions.

Strain modulation of magnetic coupling in the metallic van der waals magnet Fe<sub>3</sub>GeTe<sub>2</sub>

Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering

Strain‐Modulated Ferromagnetism at an Intrinsic van der Waals Heterojunction

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Tunable Electronic Properties and Enhanced Ferromagnetism in Cr2Ge2Te6 Monolayer by Strain Engineering

Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials

Strain‐Sensitive Magnetization Reversal of a van der Waals Magnet

Strain-sensitive ferromagnetic two-dimensional Cr2Te3

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr 2 Ge 2 Te 6

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr 2 Ge 2 Te 6

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Tuning magnetic anisotropy in Fe$_{5}$GeTe$_{2}$ monolayer through doping and strain

Strain Effects on the Magnon-Magnon Interaction and Magnon Relaxation Time in Ferromagnetic CrGeTe3

Strain tuning of the Curie temperature and valley polarization in two dimensional ferromagnetic WSe2/CrSnSe3 heterostructure

Magnetic properties manipulation of CrTe 2 bilayer through strain and self-intercalation

Strain-controlled Néel temperature and exchange bias enhancements in IrMn/CoFeB bilayers

Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr2Ge2Te6-based heterostructures

Layer-Number-Dependent Magnetism and Anomalous Hall Effect in Van Der Waals Ferromagnet Fe5GeTe2

Ferromagnetic InMoTe3 monolayer with strain-modulated magnetic interactions and Curie temperature

Proximity‐Coupling‐Induced Significant Enhancement of Coercive Field and Curie Temperature in 2D van der Waals Heterostructures