Low-temperature Preparation Achieving 10.95%-Efficiency of Hole-Free and Carbon-Based All-Inorganic CsPbI3 Perovskite Solar Cells

Junsen Zhang,Cheng Wang,Hao Fu,Li Gong,Haiping He,Zhishan Fang,Conghua Zhou,Jianlin Chen,Zisheng Chao,Jincheng Fan
DOI: https://doi.org/10.1016/j.jallcom.2020.158454
IF: 6.2
2020-01-01
Journal of Alloys and Compounds
Abstract:In this paper, hole-free, carbon-based all-inorganic CsPbI3 perovskite solar cells (PSCs) with the structure of F-doped SnO2 (FTO)/ZnO/CsPbI3/C are fabricated at a low temperature for the first time. Excess CsBr is added into CsPbI3 precursor solution to obtain stable black phase CsPbI3 at a low temperature (120 degrees C). ZnO is prepared by a spin-coating method at 120 degrees C. And then the C electrode is prepared by a doctor-blade method at 120 degrees C. The effect of different layers of ZnO on the performance of solar cells is investigated. The champion power conversion efficiency (PCE) of the solar cell based on 3 layers of ZnO is 10.95%, with a short-circuit current (Ad of 17.66 mA/cm(2), an open-circuit voltage (V-OC) of 0.91 V and a fill factor (FF) of 68%, which is the best performance for hole-free, carbon-based all-inorganic CsPbI3 PSCs fabricated at a low temperature, compared with the other reported results. The encapsulated device remained 91% of the initial PCE after being stored in a glove box for 5 months. For further application in flexible solar cells, the solar cells with the structure of PET/Sn-doped In2O3 (ITO)/ZnO/CsPbI3/C are fabricated under the best parameter conditions and the PCE of 8.70% is obtained. (C) 2020 Elsevier B.V. All rights reserved.
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