Abstract:1T1R spin-transfer-torque (STT) MRAM is a promising candidate for next-generation high-density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from limited sensing margin and high write power. As shown in Fig. 30.2.1(a), sense amplifier design is challenging due to the small difference (only 2x) between the high-resistance state (R AP ) and the low-resistance state (R P ), as well as R AP degradation with increasing temperature. Moreover, R P and R AP resistance distributions shift with process variation, requiring a read reference (V ref ) that tracks process. To improve the sensing margin, several offset-cancellation methods have been reported to reduce sense amplifier mismatch [3]. However, these methods use multiple capacitors and hence incur significant area overheads. To address this issue, we propose an offset-cancelled sense amplifier that uses only a single capacitor to significantly improve the sensing margin by more than 60%. A second design challenge for STT-MRAM stems from the high current needed to flip a cell during a write operation. For non-volatile memory applications with a 10-year retention time requirement, the write current can be as high as several hundred μA. However, as shown in Fig. 30.2.1(b), the required write time varies with the state change required (0→1 or 1→0), process variation, and temperature. As a result, a fixed write time that ensures successful write for all conditions wastes a significant energy for typical or average conditions. We propose an in situ write-self-termination method to reduce write energy in most scenarios. The sense amplifier is reconfigured to continuously monitor the write operation and automatically shuts off the write drivers when the state transition is detected, without an area or timing penalty. In addition, dual dummy columns are added in each array to provide read V ref tracking of row-wise PVT variation. A 1Mb STT-MRAM was fabricated in 28nm technology, and achieves a 2.8ns read-access time at 25°C and 3.6ns at 120°C, respectively. With in-situ self-write-termination the write power is reduced by 47% with a 20ns write-access time at 25°C and by 60% at 120°C.

28nm 4Mb 1T-1MTJ STT-MRAM Circuits with Ultra-low Power Read Scheme

A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination

A 28 nm full-margin, high-reliability, and ultra-low-power consumption sense amplifier for STT-MRAM

Ultra-low Power Access Strategy for Process-Voltage-Temperature Aware STT-MRAM

A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

A Low-power High-reliability STT-MRAM Write Scheme with Real-time Voltage Sensing Module

The fabrication of STT-MRAM memory cell with ultra-low switching power

Design and Implement of Low Power Consumption SRAM Based on Single Port Sense Amplifier in 65 Nm

A FinFET Integrated STT-MRAM with Triple Balanced Access Strategy.

An 8kb 40-Nm 2T2MTJ STT-MRAM Design with 2.6ns Access Time and Time-Adjustable Writing Process

High-Speed, Low-Power, and Error-Free Asynchronous Write Circuit for Stt-Mram and Logic

The Write Deduplication Mechanism Based On A Novel Low-Power Data Latched Sense Amplifier For A Magnetic Tunnel Junction Based Non-Volatile Memory

High Speed and Low Power Sensing Schemes for STT-MRAM with IPMTJs

An Ultra-Low-Voltage Bit-Interleaved Synthesizable 13T SRAM Circuit.

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Differential MRAM Sensing Scheme With Magnetoresistance Boosted 4T-2MTJ Bit-Cell

Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

A Novel TFET-MOSFET Hybrid SRAM for Ultra-Low-Power Applications

High Speed and Reliable Sensing Scheme with Three Voltages for STT-MRAM.