Abstract:This paper designs two single-stage LC-tank injection-locked frequency sixtuplers (ILFSs) fabricated in a 90 nm CMOS process and it describes the circuit design, operation principle, and measurement results of the ILFSs. The ILFS circuit with a differential input and single-phase output is made of a first-harmonic injection-locked oscillator (ILO), a frequency tripler, and a push-push doubler. The first ILFS uses an octagonal inductor. For a supply voltage of 0.4 V, the free-running frequency is around 41.52 GHz, DC power consumption is 9.03 mW at the incident power of 0 dBm, and the output locking range at 0 dBm input power is 10.21 %. The second ILFS uses an 8-shaped inductor for low electromagnetic (EM) noise generation. The free-running frequency is around 37.2 GHz, DC power consumption is 7.72 mW at the incident power of 0 dBm, and the output locking range at 0 dBm input power is 17.4 %. The two chips have the same area, $0.7\times0.7$ mm2. This paper also provides a further analysis and comparison of the RF performance of on-chip inductors designed. Simulation shows the substrate noise coupling and distance noise coupling between victim and aggressor, the 8-shaped inductor exhibits a significant reduction in coupling. By the measurement results, it is evident that the performance of the 8-shaped inductor ILFS is superior to that of the octagonal inductor ILFS.

Design of a Dual-Band Injection Locked Frequency Tripler with Sixth-Order Transformer-Based LC Tank

Optimization of Injection Locked Frequency Divider with Tunable Active Inductor

A Wideband CMOS Frequency Quadrupler with Transformer-Based Tail Feedback Loop.

A Low Power V-Band CMOS Frequency Divider with Wide Locking Range and Accurate Quadrature Output Phases.

A Wide Locking Range and Low Dc Power Injection-Locked Frequency Tripler for K-Band Application

A Wide Locking Range and Low Power V-band Frequency Divider in 90nm CMOS

A 22.2-GHz Injection-Locked Frequency Tripler Featuring Dual Injection and 39.4% Locking Range

V-Band Injection-Locked Oscillator with 9 Ghz Locking Range

A Dual-Mode Mm-Wave Injection-Locked Frequency Divider with Greater Than 18% Locking Range in 65nm CMOS

A 28ghz Injection-Locked Voltage-Controlled Oscillator Pair with Tunable Phase Outputs in 130nm CMOS.

V-band CMOS injection-locked frequency tripler using differential harmonic current injection technique

A 3 Mw 54.6 GHz Divide-by-3 Injection Locked Frequency Divider with Resistive Harmonic Enhancement

A K-band injection-locked frequency tripler with injection-enhancement in 130-nm CMOS

Quadrature Injection Locked Frequency Tripler with Wide Tuning Range and Low Quadrature Error for MM-Wave Applications

A 3 Mw 54 GHz 0.18 Μm BiCMOS Voltage Controlled Oscillator with Supply Injection Locking

A K-Band Low-Power Phase Shifter Based on Injection Locked Oscillator in 0.13 Μm CMOS Technology

6.2 GHz 0.5 Mw Two‐dimensional Oscillator Array‐based Injection‐locked Frequency Divider in 0.18 Μm CMOS

Design and optimization of the ring oscillator based injection locked frequency dividers.

Gigahertz range injection locked frequency dividers with band-width enhancement and supply rejection

Injection-Locked Frequency Sixtuplers in 90 nm CMOS by Using the Push-Push Doubler

19.1 GHz 18 Mw Divide-by-3 Heterodyne Injection Locking Frequency Divider in 0.18 Μm CMOS Technology