Abstract:An injection-locked frequency divider for Ku-band application is proposed.Oscillator architecture based on current-reuse technique is adopted,which consumes half of the power consumption of the conventional oscillators.Direct injection topology is introduced to reduce parasitic capacitance and improve the injection efficiency without increasing the power consumption.Due to this topology,there is no tradeoff between locking range and power consumption,which exists in the conventional injection-locked frequency divider using current source injection topology.Forward body-biasing is applied to increase the locking range of the frequency divider further.Two-bit fixed capacitor array and variable capacitors are also used to widen the operating frequency and overcome process variation.The proposed divider is designed using TSMC 0.13μm CMOS technology with a supply voltage of 1.2V and a power consumption of 1.44mW.Simulation results show that the locking range of the proposed divider is 4.95GHz from 13.50GHz to 18.45GHz when the power of the input signal is 0dBm.

19.1 GHz 18 Mw Divide-by-3 Heterodyne Injection Locking Frequency Divider in 0.18 Μm CMOS Technology

A 3 Mw 54.6 GHz Divide-by-3 Injection Locked Frequency Divider with Resistive Harmonic Enhancement

A Dual-Mode Mm-Wave Injection-Locked Frequency Divider with Greater Than 18% Locking Range in 65nm CMOS

6.2 GHz 0.5 Mw Two‐dimensional Oscillator Array‐based Injection‐locked Frequency Divider in 0.18 Μm CMOS

A Wide Locking Range and Low Power V-band Frequency Divider in 90nm CMOS

A Low Power V-Band CMOS Frequency Divider with Wide Locking Range and Accurate Quadrature Output Phases.

Design and optimization of the ring oscillator based injection locked frequency dividers.

0.6mW 6.3 GHz 40nm CMOS divide‐by‐2/3 prescaler using heterodyne phase‐locking technique

200Ghz CMOS Prescalers with Extended Dividing Range Via Time-Interleaved Dual Injection Locking

0.6Mw 6.3 Ghz 40nm Cmos Divide-By-2/3 Prescaler Using Heterodyne Phase-Locking Technique

A 1.5 Mw 26.2&#x2013;32.2 GHz Divide-by-4 Injection-Locked Frequency Divider in 130 Nm CMOS Process

A 150ghz Injection-Locked Frequency Divider with 19.8% Locking Range Based on Adjustable Inductor Tuning Method in 65-Nm CMOS

A 31–45.5 GHz Injection-Locked Frequency Divider in 90-Nm CMOS Technology

A 30 GHz Wideband CMOS Injection-Locked Frequency Divider for 60 GHz Transceiver *

A Low-Power 18-Ghz Dual-Injection-locked Frequency Divider in 65-Nm CMOS

A 30-Ghz to 39-Ghz Mm-Wave Low-Power Injection-Locked Frequency Divider in 65nm CMOS.

An Injection-Locked CMOS Frequency Divider with Low Power and Wide Locking Range for Ku-band Application

A Transformer-based Injection-Locked Frequency Divider in 65-nm CMOS Technology

A 26–47.9 GHz Ultrawideband CMOS Dual Injection‐locked Frequency Divider

A low-voltage differential injection locked divider with forward body bias

A Divide-by-Three ILFD with Second Harmonic Enhancement