Abstract:This article presents a novel class of bistable physically unclonable functions (PUFs) for security-oriented applications. The traditional cross-coupled bistable PUF cell is divided into P-net and N-net, wherein the P-net (N-net) multiplexing acts as the shared head (foot), and the N-net (P-net) duplicating multiple acts as the PUF cell. The proposed PUF was fabricated in a Taiwan Semiconductor Manufacturing Company (TSMC) 65-nm process with full-custom design. It can parallelly generate 128-bit identifications (IDs) in one clock cycle owing to the random access word-level readout framework. The measurement results show that the randomness and uniqueness of the proposed PUF are consistent with those of the state-of-the-art works. In addition, the proposed PUF has the following features: 1) the PUF cell is composed only of four nMOS transistors with a minimum feature size of 215-F 2 ; 2) the native bit instability at the golden condition (i.e., 1.2 V, 25 °C) with 500 evaluations is only 2.05%, showing a desirable native stability against supply noise; 3) the bit-error-rate dependences of the voltage and temperature are 3.35%/V and 0.011%/°C, respectively, with the voltage varying within the range 1.0-1.4 V and the temperature varying within the range -40 °C to 125 °C; 4) an autocorrelation function of 0.0049 at a 95% confidence level is achieved and is the lowest reported value to date; and 5) the energy efficiency and throughput at the maximum operating frequency (i.e., 433 MHz) are 99.48 fJ/b and 55.5 Gb/s, respectively.

A 215-F² Bistable Physically Unclonable Function with an ACF of <0.005 and a Native Bit Instability of 2.05% in 65-Nm CMOS Process

A Reliable Physical Unclonable Function Based on Differential Charging Capacitors

A New Physical Unclonable Function Architecture

25.2 A Reconfigurable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source with <6×10−6 Native Bit Error Rate

ASCH-PUF: A "Zero" Bit Error Rate CMOS Physically Unclonable Function with Dual-Mode Low-Cost Stabilization

A highly stable R-Diode-based physical unclonable function

A 0.32uW physically unclonable fuction with BER <1.18E-5 using current starved inverters

A 266F2 Ultra Stable Differential NOR-Structured Physically Unclonable Function with < 6× 10-9 Bit Error Rate Through Efficient Redundancy Strategy

A Novel Configurable RO-Obfuscated PUF Design with Machine Learning Immunity

High-Speed and Reconfigurable Physical Unclonable Functions Based on SOT-MTJ Array

A Highly Reliable RRAM Physically Unclonable Function Utilizing Post-Process Randomness Source

Physical Unclonable Function Chip based on SOT-MRAM in 180 nm CMOS Technology

A Strong Physical Unclonable Function With Virgin State Embedded Phase Change Memory

Scalable and CMOS compatible silicon photonic physical unclonable functions for supply chain assurance

Model and Physical Implementation of Multi-Port PUF in 65 Nm CMOS

A Highly Reliable and Energy-Efficient Schmitt Trigger PUF Featuring Ultra-Wide Supply Voltage Range

SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-Nm CMOS

A Novel Thyristor-Based Silicon Physical Unclonable Function

DRAM-Based PUF Utilizing the Variation of Adjacent Cells

Architecture and Physical Implementation of Reconfigurable Multi-Port Physical Unclonable Functions in 65 Nm CMOS.

Optimization of Rram-Based Physical Unclonable Function with A Novel Differential Read-Out Method