Physical Unclonable Function Chip based on SOT-MRAM in 180 nm CMOS Technology

Luyao Shi,Zhengyi Hou,Tianrui Guo,Pengbin Li,Chuanpeng Jiang,Kaihua Cao,Zhaohao Wang,Weisheng Zhao,Bi Wang
DOI: https://doi.org/10.1109/NMDC57951.2023.10343683
2023-01-01
Abstract:This paper presents a 1 kb physical unclonable function (PUF) chip fabricated in a 180-nm CMOS process. The chip consists of in-plane magnetic anisotropy spin-orbit torque (IMA-SOT) PUF arrays and the necessary periphery circuits, which utilizes the manufacturing process deviation of common state of SOT devices to generate the randomness. Moreover, a dual-mode logic control design with a self-write back circuit is proposed to implement the transition between PUF and memory functions, which improves the flexibility and reliability of the PUF chip. The self-write back circuit is activated after reading the challenge-response pairs (CRPs), which can induce to the complementary states of SOT devices. The uniformity, uniqueness and reliability are experimentally measured by a comprehensive pretest procedure, and the inter- and intra-hamming distances are computed. Additionally, the SOT-PUF chips are subjected to repeated read testing at varying temperature and supply voltages to evaluate the stability under different operating conditions. This work provides a feasible approach for the preparation of highly integrated PUF chips based on SOT devices, offering a promising solution for secure hardware authentication applications.
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