Abstract:The latest discovery of ferromagnetism in atomically thin films of semiconductors Cr$_2$Ge$_2$Te$_6$ and CrI$_3$ has unleashed numerous opportunities for fundamental physics of magnetism in two-dimensional (2D) limit and also for technological applications based on 2D magnetic materials. In this paper, we present a comprehensive theoretical study of the magnetic, electronic, optical and magneto-optical(MO) properties of multilayers [monolayer(ML), bilayer and trilayer] and bulk CrI$_3$, based on the density functional theory with the generalized gradient approximation plus on-site Coulomb repulsion scheme. Interestingly, all the structures are found to be single-spin ferromagnetic(FM) semiconductors. They all have a large out-of-plane magnetic anisotropy energy(MAE) of $\sim$0.5 meV/Cr. These large MAEs suppress transverse spin fluctuations and thus stabilize long-range magnetic orders at finite temperatures down to the ML limit. They also exhibit strong MO effects with their Kerr and Faraday rotation angles being comparable to that of best-known bulk MO materials. The shape and position of the main features in the optical and MO spectra are found to be nearly thickness-independent although the magnitude of Kerr rotation angles increases monotonically with the film thickness. Magnetic transition temperatures estimated based on calculated exchange coupling parameters, calculated optical conductivity, MO Kerr and Faraday rotation angles agree quite well with available experimental data. The calculated MAE as well as optical and MO properties are analyzed in terms of the calculated orbital-decomposed densities of states, band state symmetries and dipole selection rules. Our findings of large out-of-plane MAEs and strong MO effects in these single-spin FM semiconducting CrI$_3$ ultrathin films suggest that they will find valuable applications in semiconductor MO and spintronic nanodevices.

Molecular beam epitaxy growth of iodide thin films

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Magnetism and Magneto-optical Effects in Bulk and Few-layer CrI$_3$: A Theoretical GGA + U Study

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Growth and Stabilization of Two-Dimensional Multiferroics MnI2

Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se$_2$ on 2D, 3D and polycrystalline substrates

Epitaxial growth of AgCrSe2 thin films by molecular beam epitaxy

Resolving the intrinsic bandgap and edge effect of BiI3 film epitaxially grown on graphene

Epitaxial growth, structural characterization and exchange bias of non-collinear antiferromagnetic Mn$_{3}$Ir thin films

Molecular beam epitaxial growth of topological insulators.

Orientation-Controlled Large-Area Epitaxial PbI2 Thin Films with Tunable Optical Properties

Growth of millimeter-sized 2D metal iodide crystals induced by ion-specific preference at water-air interfaces

Epitaxial Stabilization of Tetragonal Cesium Tin Iodide

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Epitaxy of 2D Materials toward Single Crystals

Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides

Vapor Deposition of Magnetic Van Der Waals NiI2 Crystals.

Selectable Growth and Electronic Structures of Two-Dimensional Layered InSe and In2Se3 Films