Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has superior performances in terms of high switching frequency and low power loss, but its widespread applications in markets have been partly hindered by its ruggedness and reliability. Overcurrent operation is a common phenomenon which causes overheat of power devices and further leads to degradation or even device failures in power electronic systems. However, in- depth degradation mechanism and limiting factors of repetitive overcurrent capability have not been comprehensively studied yet. In this article, we investigated the conduction and the switching overcurrent stress separately to figure out the roles of each operation processes in the degradation of 1.2-kV SiC planar-gate MOSFETs for the first time. It is observed that the conduction overcurrent stress causes a positive shift of threshold voltage, while the switching overcurrent stress leads to a negative shift of threshold voltage as well as larger gate leakage current. Electrons captured at the SiC/SiO2 interface may be the reason for the positive shift of threshold voltage, while the negative shift of threshold voltage may be due to the injection and accumulation of the holes into the gate oxide at JFET and near-channel region. Both experimental results and simulation analysis show that the switching overcurrent stress plays a major role in the degradation of 1.2-kV SiC planar-gate MOSFETs under repetitive overcurrent stress. In addition, the influence of major limiting factors, including overcurrent level, overcurrent duration, and drain–source voltage, is also investigated to evaluate the reliability of SiC planar-gate MOSFETs under different overcurrent conditions, which will provide a useful guidance for dedicated design and utilization of SiC MOSFETs.

Degradation Assessment of SiC MOSFETs under the Repetitive Short Circuit Ageing with Different Gate-Source Voltage Bias

Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Degradation Assessment of 1.2-Kv SiC MOSFETs and Comparative Study with 1.2-Kv Si IGBTs under Power Cycling

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Degradation of 4H-Sic Trench MOSFET under Single and Repetitive Short-Circuit Stress

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power MOSFETs under Repetitive Short Circuit Stress

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress

Degradation Behavior and Defect Analysis for SiC Power MOSFETs Based on Low-Frequency Noise Under Repetitive Power-Cycling Stress

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Gate Oxide Degradation of SiC MOSFET in Switching Conditions

Investigation On Degradation Mechanism And Optimization For Sic Power Mosfets Under Long-Term Short-Circuit Stress

A Deep Insight into the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Unclamped Inductive Switching Stresses

Understanding the Degradation of 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Over-load Current Stress

Failure Mechanism Analysis of 1.2 kV SiC MOSFETs Under Low-Temperature Storage, Power Cycling, and Short-Circuit Interactions

Degradation Of 4h-Sic Mosfets Under Different Short Circuit Test Conditions: A Simulation Study