Abstract:Solution-processed high-kappa gate dielectrics, such as Al2O3 and HfO2, show great potential for use in low-cost electronics. However, high-temperature treatments are generally needed to cure the film, limiting the use in flexible electronics. Here we use anodization, a simple, low-cost, solution-based method, to form thin, conformal, high quality HfOx layers at room temperature. Several anodization voltages were studied, and the relative quantity of Hf-O bonding was found to increase by 10% when increasing anodization voltage from 2 to 3 V, while maintaining almost the same when further increasing the anodization voltage. Conduction mechanisms were analyzed, showing that Schottky emission dominates even for the thinnest oxides. HfOx layers formed by anodization voltages of 2, 3, and 4 V show high capacitance density of 1290, 1160, and 1060 nF/cm(2), which are equivalent to 2.68, 2.97, and 3.26 nm of thermally grown SiO2. Using such high capacitance density insulators, we fabricated InGaZnO (IGZO) thin-film transistors (TFTs) at room temperature, showing a low operating voltage of 0.5 V, one of the lowest for oxide-semiconductor-based TFTs. TFTs gated with HfOx anodized at the optimal voltage, 3 V, show a high current on/off ratio of >10(5), a mobility approaching 10 cm(2)/(V s), and a subthreshold swing as low as 69 mV/dec, close to the theoretical limit at 300 K. The interface trap density was found to be highly related to the quality of the HfOx film, showing a 50% decrease with the increase of anodization voltage from 2 to 3 V. The devices show negligible change after storage in air for 6 months and favorable stability under both positive and negative gate bias stress. Finally, we demonstrate TFTs on plastic substrates, maintaining high quality performance even under a bending radius of 9 mm. As a result, such devices have potential applications in low-cost, low-voltage-operation, low-power electronics.

A Low-Temperature Solution-Process High-k Dielectric for High-Performance Flexible Organic Field-Effect Transistors

A Low-Temperature, Solution-Processed High-K Dielectric for Low-Voltage, High-Performance Organic Field-Effect Transistors (Ofets)

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Low-voltage Organic Single-Crystal Field-Effect Transistors and Inverters Enabled by a Solution Processable High-Kdielectric

Low-temperature Solution-Processed Alumina As Gate Dielectric for Reducing the Operating-Voltage of Organic Field-Effect Transistors

Low-temperature Solution-Processed Alumina Dielectric Films for Low-Voltage Organic Thin Film Transistors

Low-voltage-operation of Flexible Organic C8-BTBT Thin-Film Transistors with a Reactively Sputtered AlOx Gate Dielectric

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

Low-Voltage Organic Single-Crystal Field-Effect Transistor with Steep Subthreshold Slope.

Sol-gel Processed High-K Aluminum Oxide Dielectric Films for Fully Solution-Processed Low-Voltage Thin-Film Transistors

Low-Temperature Solution-Processed High-K Zrtiox Dielectric Films for High-Performance Organic Thin Film Transistors

Low-Voltage Organic Field-Effect Transistors (ofets) with Solution-Processed Metal-Oxide As Gate Dielectric

High-Performance Ultra-Low-Power OFET Based on Anodized TiOx Dielectric and Solution-sheared Organic Single Crystal

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors

Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors.

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

Towards Low-Voltage Organic Thin Film Transistors (otfts) with Solution-Processed High-K Dielectric and Interface Engineering

P‐7.10: Facile low‐temperature solution‐processed ZrO<sub>2</sub> films as high‐k dielectrics for flexible low ‐ power thin‐film transistors

Low-voltage organic field-effect transistors by using solution-processable high-κ inorganic-polymer hybrid dielectrics

Solution-Processed HfOx for Half-Volt Operation of InGaZnO Thin-Film Transistors

A Low Temperature Solution-Processed Ormosil Film for Low-Voltage Organic Field-Effect Transistors