Abstract:In this work, acetylacetone assisted solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) using Al2O3 as gate dielectrics were investigated. Normally, fully covered Al2O3 thin films are difficult to achieve by spin coating with conventional solvent, such as 2-methoxyethanol, due to the poor wettability of highly doped silicon. Here, a conventional aluminum nitrate solution with an additive was designed to spin coat robust continuous Al2O3 thin films, resulting from improved solution hydrophilic with a contact angle of 17 degrees. For active layer fabrication, we utilized the previous reported combustion process to lower treatment temperature, which could be confined in the range from 220 degrees C to 300 degrees C, without losing the device performance. Results show that all the devices performed well. Especially, after 240 degrees C annealing of both Al2O3 (in thickness of around 45 nm) and IGZO thin films (in thickness of around 30 nm), we have obtained the following device parameters, namely a Al2O3 dielectric breakdown electric field at 7.8 MV cm(-1), a current density of around 1 x 10(-6) A cm(-2) in the voltage range of -3 V to 3 V, a areal capacitance of 291 nF cm(-2) at 100 Hz, a carrier mobility of 0.74 cm(2) V-1 s(-1), a threshold voltage of -0.4 V, a current on-off ratio of 6 x 10(3), a subthreshold swing of 375 mV per decade. Fabrication of combustion-processed active layers and our facile solution processed high-k dielectrics provides a feasible approach for low cost oxide flexible TFTs applications.

Low-temperature Solution-Processed Alumina Dielectric Films for Low-Voltage Organic Thin Film Transistors

Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors.

Low-temperature Solution-Processed Alumina As Gate Dielectric for Reducing the Operating-Voltage of Organic Field-Effect Transistors

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Low-Temperature Solution-Processed High-K Zrtiox Dielectric Films for High-Performance Organic Thin Film Transistors

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

A Low-Temperature Solution-Process High-k Dielectric for High-Performance Flexible Organic Field-Effect Transistors

Sol-gel Processed High-K Aluminum Oxide Dielectric Films for Fully Solution-Processed Low-Voltage Thin-Film Transistors

The annealing effects on the properties of solution-processed alumina thin film and its application in TFTs

Low-voltage-operation of Flexible Organic C8-BTBT Thin-Film Transistors with a Reactively Sputtered AlOx Gate Dielectric

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

Solution Processable High Quality ZrO2 Dielectric Films for Low Operation Voltage and Flexible Organic Thin Film Transistor Applications

Aqueous Solution Induced High-Dielectric-Constant AlOx :Y Films for Thin-Film Transistor Applications

Towards Low-Voltage Organic Thin Film Transistors (otfts) with Solution-Processed High-K Dielectric and Interface Engineering

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors

Solution‐Processed Alkaline Lithium Oxide Dielectrics for Applications in N‐ and P‐type Thin‐Film Transistors

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

Low-power organic field-effect transistors and complementary inverter based on low-temperature processed Al2O3 dielectric

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric