Polarization-sensitive Photodetectors Based on Three-Dimensional Molybdenum Disulfide (mos2) Field-Effect Transistors

Tao Deng,Shasha Li,Yuning Li,Yang Zhang,Jingye Sun,Weijie Yin,Weidong Wu,Mingqiang Zhu,Yingxin Wang,Zewen Liu
DOI: https://doi.org/10.1515/nanoph-2020-0401
IF: 7.5
2020-01-01
Nanophotonics
Abstract:Abstract The molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.
What problem does this paper attempt to address?