Abstract:Addressing the criticality of IGBT modules in power electronics and reliability challenges in industrial applications, this study focuses on solving the important problem of solder layer aging failure in IGBT modules. Under defined operating conditions, a specific set of electrical parameters, notably the collector-emitter saturation voltage Vce (sat) , serves as a critical indicator for monitoring the degradation of solder layers within IGBT modules. This parameter is indicative of potential solder layer aging failures, which can be identified and studied to predict and mitigate such failures effectively. In order to analyze the aging trend more deeply and accurately, a new nature-inspired meta-heuristic algorithm based on Crested Porcupine Optimizer is introduced. Combining multiple data during the operation of the IGBT module, such as gate voltage, gate current, heatsink temperature, case temperature, collector-emitter current, and Vce (sat) , the parameter optimization is carried out by using CPO, and a prediction model based on the optimization of the SVR by CPO is established, which is successfully implemented to predict the accurate prediction of IGBT module solder layer lifetime. The study also validates the effectiveness of the CPO-SVR method on an accelerated aging dataset of IGBT modules provided by NASA Lab. The results of this research contribute to an in-depth understanding and prediction of the aging process of IGBT modules, which in turn improves the reliability and lifetime of the devices.

Chip Metallization Aging Monitoring with Induced Voltage Vee Between Kelvin and Power Emitter for High Power IGBT Modules

Online Aging Parameter Extraction with Induced Voltage $v_{\text{ee}}$ Between Kelvin and Power Emitter in Turn-off Progress for IGBT Modules

An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring

In-situ Monitoring Chip Failure in Multichip IGBT Modules Using Turn-on Delay Time Extracted from Auxiliary Emitter Voltage

A Novel Online Chip-Related Aging Monitoring Method for IGBTs Based on the Leakage Current

Condition Monitoring Igbt Module Bond Wires Fatigue Using Short-Circuit Current Identification

A real-time aging monitoring method of parallel-connected IGBT modules

Study of Accelerated Power Cycling Test of IGBT Power Modules

Research on performance parameter degradation of high voltage and high power IGBT module in power cycling test

Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge

An Online Monitoring Method for Bond Wire Fatigue in IGBT Module

Wear-out Mechanism of Press-pack IGBTs Under Accelerated Aging Test

Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach

In Situ Diagnosis for IGBT Chip Failure in Multichip IGBT Modules Based on a Newly Defined Characteristic Parameter Low-Sensitive to Operation Conditions

Study of Electrical Contacts Fatigue and Degradation Evaluation for Press Pack IEGT under Power Cycling Tests

Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests

Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling

Predicting aging of IGBT solder layer using saturation voltage approach with CPO-SVR data modeling

A Decoupled Junction Temperature and Aging Level Evaluating Method for SiC MOSFETs

An Adaptive Electrothermal Model for Estimating the Junction Temperature of Power Device

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules