Abstract:Owing to the advantages of short-circuit failure mode, double-sided heat dissipation, and low thermal resistance, press-pack insulated gate bipolar transistors (PP-IGBTs) are widely used in high-power-density applications, such as high-voltage direct-current converters. As the core device of large-capacity power equipment, the reliability of a PP-IGBT is directly related to the security of the power system. In recent years, a silver-sintered package has been proposed to improve the electro-thermal performance of PP-IGBTs. However, the long-term reliability of this package has not been proven. In response to this problem, 3300-V/50-A silver-sintered PP-IGBT (SPP-IGBT) modules are used in long-reliability research. First, electro-thermal-stress finite-element models of PP-IGBTs and SPP-IGBTs were proposed and the accuracy of models verified by experiments. Through a simulation comparison, the results show that under the rated operating conditions, the on-voltage and maximum temperature of SPP-IGBTs dropped by 9.3% and 3.7%, respectively. In addition, the temperature and stress of each component were reduced, among which the surface stress of the IGBT chip emitter dropped by as much as 24.7%. Subsequently, a power-cycle test platform was established, and three PP-IGBTs and three SPP-IGBTs were tested. Finally, the experimental results were compared and analyzed, and the reasons for the sharp increase of on-voltage and metal melt were explored. The results show that the silver-sintered package improves the electrical-thermal performance and long-term reliability of the module.

Study of Electrical Contacts Fatigue and Degradation Evaluation for Press Pack IEGT under Power Cycling Tests

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Wear-out Evolution Analysis of Multiple-Bond-wires Power Modules Based on Thermo-Electro-mechanical FEM Simulation

Wear-out Mechanism of Press-pack IGBTs Under Accelerated Aging Test

The Effect of the Surface Roughness Characteristics of the Contact Interface on the Thermal Contact Resistance of the PP-IGBT Module

4H-SiC/SiO2 Interface Degradation in 1.2 kV 4H-SiC MOSFETs due to Power Cycling Tests

Competitive Failures Decoupling and Mechanisms Analysis of SiC MOSFET Module Under Power Cycling Stress

Study on the Method to Measure Thermal Contact Resistance Within Press Pack IGBTs

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Review on Power Cycling Reliability of SiC Power Device

Study of Accelerated Power Cycling Test of IGBT Power Modules

Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

Investigation on Saturation Voltage Increment of Multichip Press-Pack IGBTs Under Power Cycling Tests

Study on the Effect of Test Condition on Thermal Resistance of the Press-Pack IGBT Module

Research on Long-term Reliability of Silver Sintered Press-Pack IGBT Modules

Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach

Active Peltier Effect Heat Sink for Power Semiconductor Device Thermal Stability Enhancement

Characterization of packaging warpage, residual stress and their effects on the mechanical reliability of IGBT power modules

Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress

Study of microstructural evolution during operation of electrically connected components and analysis of failure mechanism