Abstract:Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1−xBixSe4 (x = 0–0.04) samples were fabricated through melting and hot pressing process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2−xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWm−1 K−2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm−1 K−1 and thermal conductivity (κtot) of ~ 0.62 Wm−1 K−1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times higher than that of pristine Cu3SbSe4. This work shows that isovalent heavy element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.

Ultra-low Thermal Conductivity and High Thermoelectric Performance Realized in a Cu3SbSe4 Based System

Realized High Power Factor and Thermoelectric Performance in Cu3SbSe4

Ultralow Thermal Conductivity and Extraordinary Thermoelectric Performance Realized in Codoped Cu3SbSe4 by Plasma Spark Sintering

Facile Synthesis of Monodisperse Cu3SbSe4 Nanoparticles and Thermoelectric Performance of Cu3SbSe4 Nanoparticle-Based Materials

Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe2 Via Cd-Doping

Unlocking the Potential of Cu3SbSe3: Ultralow Thermal Conductivity and Enhanced Thermoelectric Performance

High Thermoelectric Performance of Cu 3 SbSe 4 Obtained by Synergistic Modulation of Power Factor and Thermal Conductivity

Ultralow Thermal Conductivity and Enhanced Figure of Merit for CuSbSe 2 via Cd-Doping

Ultrahigh thermoelectric performance in Cu2−ySe0.5S0.5 liquid-like materials

Realizing the Ultralow Lattice Thermal Conductivity of Cu3SbSe4 Compound via Sulfur Alloying Effect

Approaching high thermoelectric performance in p-type Cu3SbS4-based materials by rational electronic and nano/microstructural engineering

Co-precipitation Synthesis of Sn And/or S Doped Nanostructured Cu3Sb1−xSnxSe4−ySy with a High Thermoelectric Performance

Co-precipitation synthesis of nanostructured Cu3SbSe4 and its Sn-doped sample with high thermoelectric performance

Ultralow Thermal Conductivity and High ZT of Cu2Se-based Thermoelectric Materials Mediated by TiO2−n Nanoclusters

High thermoelectric performance of Cu3SbSe4 nanocrystals with Cu2-xSe in situ inclusions synthesized by a microwave-assisted solvothermal method

Superconductivity in efficient thermoelectric Cu$_3$Sb$_{0.98}$Al$_{0.02}$Se$_4$

Bi and Sn Co-Doping Enhanced Thermoelectric Properties of Cu3SbS4 Materials with Excellent Thermal Stability.

Ultralow Lattice Thermal Conductivity and High Thermoelectric Figure of Merit in Dually Substituted Cu12Sb4S13 Tetrahedrites

Extremely Low Thermal Conductivity And High Thermoelectric Performance In Liquid-Like Cu2se1-Xsx Polymorphic Materials

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

Extremely Low Lattice Thermal Conductivity Leading to Superior Thermoelectric Performance in Cu 4 TiSe 4