Abstract:Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices. As the experimental advances in materials preparation and characterization have come together with great progress in theoretical modeling of ferroelectrics, both theorists and experimentalists can finally probe the same length and time scales. This allows realtime feedback between theory and experiment, with new discoveries now routinely made both in the laboratory and on the computer. Throughout this chapter, we will highlight the recent advances in density functional theory based modeling and the role it played in our understanding of ultrathin ferroelectrics. We will begin with a brief introduction to ferroelectricity and ferroelectric oxides, followed by an overview of the major theoretical developments. We will then discuss some of the subtleties of ferroelectricity in perovskite oxides, before turning our attention to the main subject of the chapter -- ferroelectricity in ultrathin films. We will discuss in detail the influence of the mechanical, electrical and chemical boundary conditions on the stability of the polar state in a parallel plate capacitor geometry, introducing the notion of depolarization fields that tend to destabilize ferroelectricity. We will look at other ways in which a thin ferroelectric can preserve its polar state, focusing on ferroelectric domains and domain walls. Finally, we will briefly discuss artificially layered ferroelectrics and the potential they hold as tailor-made materials for electronic applications.

Effect of Electrode on Dielectric Susceptibility and Pyroelectric Properties of a Ferroelectric Thin Film Capacitor Using Landau-Khalatnikov Theory

Influence of imperfect surface layers on dielectric and pyroelectric properties of ferroelectric thin film

Effect Of Screening And Depolarization In Cylindrical Ferroelectric Capacitor

Competing charge transfer and screening effects in two-dimensional ferroelectric capacitors

Ferroelectricity in ultrathin film capacitors

Spontaneous Polarization in an Ultrathin Improper-Ferroelectric/Dielectric Bilayer in a Capacitor Structure at Cryogenic Temperatures

Giant Electrocaloric Effect in Ferroelectric Ultrathin Films at Room Temperature Mediated by Flexoelectric Effect and Work Function

Critical Properties of Symmetric Nanoscale Metal–ferroelectric–metal Capacitors

Electrodes controlling phase diagrams of symmetric ferroelectric tunneling junctions or capacitors

A New Mechanism for the Influence of Electroplating and Electroless Plating on Ferroelectric Components

Influence of imperfect surface on properties of ferroelectric thin film

Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes.

Microscopic Insights into the Faradaic Reaction Effects on the Electric Double Layers

On the persistence of polar domains in ultrathin ferroelectric capacitors

Effects of Kinetic Dielectric Decrement on Ion Diffusion and Capacitance in Electrochemical Systems.

Critical Properties of Nanoscale Asymmetric Ferroelectric Tunnel Junctions or Capacitors

Electrodynamics of ferroelectric films with negative capacitance

Depolarizing-Field Effect in Strained Nanoscale Ferroelectric Capacitors and Tunnel Junctions

Effect of surface ionic screening on polarization reversal scenario in ferroelectric thin films: crossover from ferroionic to antiferroionic states

On the negative capacitance in ferroelectric heterostructures